Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces

Thiel, Thierry C. van; Brzezicki, Wojciech; Autieri, Carmine; Hortensius, J. R.; Afanasiev, D.; Gauquelin, Nicolas; Jannis, Daen; Janssen, Nico; Groenendijk, Dirk J.; Fatermans, Jarmo; Aert, Sandra Van; Verbeeck, Johan; Cuoco, Mario; Caviglia, Andrea D.

doi:10.1103/physrevlett.127.127202

Cited by 23 publications

(14 citation statements)

References 81 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…61 , 62 The calculation of the hopping parameters was carried out in the non-magnetic case to get rid of the magnetic effects and evaluate just the bare-band structure hopping parameters, and then, the hopping parameters will be used for the model Hamiltonian part. 63 In order to have parameters to use for the model Hamiltonian, we do not perform the maximum localization so as to have the Wannier function basis of our tight-biding model as close as possible to the atomic orbitals.…”

Section: Methodsmentioning

confidence: 99%

“…To calculate the AFM direct exchange for MnPS 3 and NiPS 3 , we extracted the real-space tight-binding Hamiltonian with atom-centered Wannier functions with d-like orbital projections on the transition metals using the Wannier90 code. , We calculated separately the hopping parameters for the orbitals, symmetric and antisymmetric with respect to the basal plane. The different symmetry and the separation in energy help to disentangle the two subsectors of the d manifold. , The calculation of the hopping parameters was carried out in the non-magnetic case to get rid of the magnetic effects and evaluate just the bare-band structure hopping parameters, and then, the hopping parameters will be used for the model Hamiltonian part . In order to have parameters to use for the model Hamiltonian, we do not perform the maximum localization so as to have the Wannier function basis of our tight-biding model as close as possible to the atomic orbitals.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Limited Ferromagnetic Interactions in Monolayers of MPS₃ (M = Mn and Ni)

et al. 2022

View full text Add to dashboard Cite

We present a systematic study of the electronic and magnetic properties of two-dimensional ordered alloys, consisting of two representative hosts (MnPS 3 and NiPS 3 ) of transition metal phosphorus trichalcogenides doped with 3d elements. For both hosts, our DFT + U calculations are able to qualitatively reproduce the ratios and signs of all experimentally observed magnetic couplings. The relative strength of all antiferromagnetic exchange couplings, both in MnPS 3 and in NiPS 3 , can successfully be explained using an effective direct exchange model: it reveals that the third-neighbor exchange dominates in NiPS 3 due to the filling of the t 2g subshell, whereas for MnPS 3 , the first-neighbor exchange prevails, owing to the presence of the t 2g magnetism. On the other hand, the nearest neighbor ferromagnetic coupling in NiPS 3 can only be explained using a more complex superexchange model and is (also) largely triggered by the absence of the t 2g magnetism. For the doped systems, the DFT + U calculations revealed that magnetic impurities do not affect the magnetic ordering observed in the pure phases, and thus, in general in these systems, ferromagnetism may not be easily induced by such a kind of elemental doping. However, unlike for the hosts, the first and second (dopant–host) exchange couplings are of similar order of magnitude. This leads to frustration in the case of antiferromagnetic coupling and may be one of the reasons of the observed lower magnetic ordering temperature of the doped systems.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Limited Ferromagnetic Interactions in Monolayers of MPS₃ (M = Mn and Ni)

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Additional evidence of the interplay between the real-space geometry of a nanosystem and the internal geometry of the electronic wavefunctions, first unveiled in corrugated bilayer graphene 67 , could be pursued in complex oxides such as SrRuO 3 . Ultrathin films of this magnetic material are characterized by strong Berry curvature 115 . Moreover, monocrystalline nanomembranes have been isolated 116 and could be transferred to curved templates.…”

Section: Discussionmentioning

confidence: 99%

Curved electronics: geometry-induced effects at the nanoscale

Gentile¹,

Cuoco²,

Volkov³

et al. 2022

Preprint

View full text Add to dashboard Cite

Research into electronic nanomaterials has recently seen a growing focus into the synthesis of structures with unconventional curved geometries including bent wires in planar systems and three-dimensional architectures obtained by rolling up nanomembranes. The inclusion of these geometries has led to the prediction and observation of a series of novel effects that either result from shape-driven modifications of the electronic motion or from an intrinsic change of electronic and magnetic properties due to peculiar confinement effects. Moreover, local strains often generated by curvature also trigger the appearance of new phenomena due to the essential role played by electromechanical coupling in solids. Here we review the recent developments in the discovery of these shape-, confinement-and strain-induced curvature effects at the nanoscale, and discuss their potential use in electronic and spintronic devices.

show abstract

“…It has been revealed that in a BaTiO 3 (BTO)/SRO heterointerface, ferroelectric-driven ionic displacements in BTO can penetrate into SRO near the interface, resulting in a displacement between Ru and O along the [001] axis. ,, This ferroelectric-driven lattice distortion breaks the inversion symmetry of the SRO structure near the interface, inducing a strong DMI, which is the driving force for the formation of skyrmions. Moreover, van Thiel et al reported that charge discontinuity in the SRO/LaAlO 3 interface can result in the broken inversion symmetry, thus inducing both magnetic and topological reconstruction in the SRO layer. Nonetheless, the hump-like Hall signal may also result from SRO inhomogeneity and can be explained by a two-channel anomalous Hall effect (AHE) model. − Ren et al reported that the observed nonmonotonic anomalous Hall resistivity behavior in the BFO/SRO bilayer system can be attributed to SRO inhomogeneity instead of THE.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO₃/BiFeO₃ Multilayers

Xin-zi

Wang

Guo

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO 3 (SRO) and multiferroic BiFeO 3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2−3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.

show abstract

Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces

Cited by 23 publications

References 81 publications

Limited Ferromagnetic Interactions in Monolayers of MPS₃ (M = Mn and Ni)

Limited Ferromagnetic Interactions in Monolayers of MPS₃ (M = Mn and Ni)

Curved electronics: geometry-induced effects at the nanoscale

Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO₃/BiFeO₃ Multilayers

Contact Info

Product

Resources

About

Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces

Cited by 23 publications

References 81 publications

Limited Ferromagnetic Interactions in Monolayers of MPS3 (M = Mn and Ni)

Limited Ferromagnetic Interactions in Monolayers of MPS3 (M = Mn and Ni)

Curved electronics: geometry-induced effects at the nanoscale

Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3 Multilayers

Contact Info

Product

Resources

About

Limited Ferromagnetic Interactions in Monolayers of MPS₃ (M = Mn and Ni)

Limited Ferromagnetic Interactions in Monolayers of MPS₃ (M = Mn and Ni)

Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO₃/BiFeO₃ Multilayers