Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster

Oh, Tae Su; Jeong, Hyun; Lee, Yong Seok; Kim, Jan Di; Seo, Tae Hoon; Kim, Hun; Park, Ah Hyun; Lee, Kang Jea; Suh, Eun‐Kyung

doi:10.1063/1.3224176

Cited by 30 publications

(15 citation statements)

References 20 publications

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“…Among many recent approaches to the improvement of int , the increase of radiative recombination rate by coupling QW to surface plasmons ͑SPs͒ has been actively studied for the fabrication of high efficiency LEDs. [1][2][3][4][5][6][7] Surface plasmons are the collective oscillations of free electrons in a metal at the interfaces between metals and dielectrics. Specifically, the collective oscillations of electrons in noble metal nanoparticles embedded in a dielectric matrix are localized surface plasmons ͑LSPs͒.…”

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confidence: 99%

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Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles

Cho¹,

Lee²,

Song³

et al. 2011

Applied Physics Letters

138

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We demonstrate the surface plasmon ͑SP͒ enhanced green light-emitting diodes ͑LEDs͒. The Au nanoparticles were embedded in the p-GaN of LEDs. The photoluminescence and electroluminescence measurements showed improved optical properties of LEDs with Au nanoparticles due to an increase in the spontaneous emission rate by resonance coupling between the excitons in multiple quantum wells and localized surface plasmons in Au nanoparticles. The optical output power of SP-enhanced green LEDs with Au nanoparticles was increased by 86% without showing degradation of the electrical characteristics of LEDs compared to LEDs without Au nanoparticles.

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confidence: 99%

“…1,7 Therefore, the enhanced PL intensity and blueshift of the PL peak are due to the QW-LSP coupling by Au nanoparticles. 4 To further investigate the coupling mechanism, time-resolved PL ͑TR-PL͒ measurement was performed. The pulse width, wavelength, and repetition rate were chosen as 150 fs, 370 nm, and 76 MHz, respectively.…”

mentioning

confidence: 99%

Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles

Cho¹,

Lee²,

Song³

et al. 2011

Applied Physics Letters

138

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“…Similar PL peak energy shifts have been reported previously and were regarded as evidence for an SP coupling process. 7,8 The enhancement of the PL intensity and the red-shift of the PL peak are clearly manifested in the wavelength-dependent PL intensity ratio, as shown in Fig. 2b.…”

mentioning

confidence: 88%

Enhanced Blue Emission from InGaN Quantum Wells by Surface Plasmon in Multi-Walled Carbon Nanotubes

Cho

Lee

Hong

et al. 2012

ECS J. Solid State Sci. Technol.

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We report on the surface plasmon-mediated blue emission from InGaN/GaN multiple quantum wells (MQWs) with multi-walled carbon nanotubes (MWCNTs). The integrated photoluminescence (PL) intensity from the MQWs with MWCNTs is increased by 2.6 times compared with that of MQWs without MWCNTs. The time-resolved and temperature-dependent PL spectra indicate that the improved PL intensity of MQWs is attributed to an increase in the spontaneous emission rate in the MQWs, which occurred via the coupling of the excitons in the MQWs with surface plasmons in the MWCNTs.Surface plasmon polaritons at metal surfaces and the localized surface plasmons of metal nanoparticles have been extensively studied to enhance the spontaneous emission rate of excitons in multiple quantum wells (MQWs) and the optical output power of light-emitting diodes (LEDs). 1-8 A number of groups have proposed methods to improve the light emission efficiency of quantum well (QW) by controlling the resonance coupling and energy transfer between the QW and surface plasmons (SPs) using metals such as aluminum, 1 gold, 1,7 silver, 4-6 and platinum. 8 Recently, several groups have reported enhanced photoluminescence (PL) of ZnO films 9 and nanowires 10 by SP coupling with carbon nanotubes (CNTs), indicating that CNTs are a feasible source of collective charge oscillations. Furthermore, CNTs have very high electrical conductivity, as well as high thermal conductivity and mechanical strength. However, there have been few studies on the SP coupling of CNTs with InGaN/GaN MQWs which are widely used in GaN-based LEDs.In this study, we report a dramatic increase in the PL emission from InGaN/GaN MQWs at a blue emission wavelength of 465 nm, after the MQWs were spin-coated with multi-walled carbon nanotubes (MWCNTs). Time-resolved and temperature-dependent PL measurements showed that the PL intensity and internal quantum efficiency of the InGaN/GaN MQWs with MWCNTs were enhanced through a resonance coupling between the excitons in the MQWs and SPs in the MWCNTs.The InGaN/GaN MQWs with 465 nm-emission were grown on a c-plane (0001) sapphire substrate using metallorganic chemical vapor deposition. After the growth of a 25 nm-thick GaN nucleation layer at 550 • C, a 2 μm-thick undoped GaN layer and a 2 μm-thick Si-doped n-type GaN layer with a doping level of 4 × 10 18 cm −3 were grown at 1020 • C. Next, five periods of InGaN/GaN QW were subsequently grown at 770 • C to form the MQWs, followed by the formation of a 20 nm-thick undoped GaN layer grown at 970 • C as a spacer-layer between the MQWs and the MWCNTs. The thicknesses of the InGaN QWs and the GaN barriers are 3 and 12 nm, respectively, and the In content in the InGaN QW is 18%. The purified MWCNTs with an average outer diameter of 15.5 nm were sonicated for 24 h in a 1 wt% aqueous solution of sodium-dodecyl-sulfate, to obtain a uniform and stable suspension. Figure 1a and 1b shows high-resolution transmission electron microscopy (HRTEM) images of the purified MWCNTs. The MWCNTs were deposited on the InGaN/GaN M...

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“…Light-emission efficiency enhancement from InGaN based LEDs can also be obtained by the use of surface plasmon polaritons (SPPs) supported by metallic films or nanostructures [147][148][149][150][151][152][153][154]. This approach can be treated as a two-step process involving plasmon-enhanced spontaneous emission followed by scattering of the emitted SPPs into radiation [155].…”

Section: Potential Origins Of the 'Green Gap' And Solutionsmentioning

confidence: 99%

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2017

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This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

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Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster

Abstract: Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure Appl.

Cited by 30 publications

References 20 publications

Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles

Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles

Enhanced Blue Emission from InGaN Quantum Wells by Surface Plasmon in Multi-Walled Carbon Nanotubes

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

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