Coupling quantum dots to optical fiber: Low pump threshold laser in the red with a near top hat beam profile

Cheng, Huihui; Mironov, Andrey E.; Ni, Jimmy H.; Yang, H. J.; Chen, W. W.; Zhou, Dai; Dragic, Peter D.; Dong, Jun; Park, S.-J.; Eden, J. G.

doi:10.1063/1.4913698

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…Elárea activa del LPC está basada en In x Ga 1−x As y consiste en la deposición de una matriz de tres repeticiones de pozos cuánticos de In 0.15 Ga 0.85 As, en los cuales se incrustan los PCs de InAs [13]. La emisión de la luz láser depende del tamaño de los PC y varía dentro del rango de las ventanas de menor absorción de las fibrasópticas [14,15]. Aunque las dimensiones de un PC son a escala nanométrica, como se muestra en la imagen tomada por microscopia de tunelamien-FIGURA 2.…”

Section: Methodsunclassified

Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo

et al. 2018

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En este trabajo se reporta la fabricación de un dispositivo láser de semiconductores III-V de confinamiento separado. La heteroestructura se creció usando la técnica de epitaxia por haces moleculares y se caracterizóóptica, topográfica y eléctricamente por medio de fotoluminiscencia, microscopia de tunelamiento, electroluminiscencia, relaciones de corriente-voltaje y corriente-potencia, respectivamente. El confinamiento electrónico es llevado a cabo por un emparedamiento delárea activa con pozos cuánticos de InGaAs con una composición que permite un acople estructural entre el pozo cuántico y los puntos cuánticos autoensamblados de InAs disminuyendo las dislocaciones que darían lugar a una mala calidad del dispositivo. El objetivo es obtener una emisión láser en las ventanas de menor absorción de las fibraś opticas situadas en el cercano infrarrojo en las que se basan los sistemas de telecomunicación. Descriptores: Puntos cuánticos; dispositivos semiconductores; epitaxia por haces moleculares; láser. In this work the fabrication of III-V semiconductor laser device with separate confinement is reported. The heterostructure was grown by molecular beam epitaxy technique and it was characterized by optical, morphological and electrical techniques such as photoluminescence, scanning tunneling effect, electroluminescence, current-voltage and current-power relations, respectively. The electronic confinement was carried out by sandwiching the active area with InGaAs quantum well with an appropriated Indium composition that allows a structural coupling between quantum wells and self-assembled InAs quantum dots decreasing dislocations that could commit the device quality. Our aim is to obtain the laser emission in the lower absorption windows for optical fiber telecommunications systems located in the near-infrared.

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Section: Methodsunclassified

Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo

et al. 2018

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Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

Liu

Chen

et al. 2018

Adv Funct Materials

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ZnS, as one of the first semiconductors discovered and a rising material star, has embraced exciting breakthroughs in the past few years. To shed light on the design principles and engineering techniques of ZnS for improved/novel optoelectronic properties, the fundamental mechanisms and commonly employed strategies are proposed in this review. Recent progress on modifications of ZnS allows it to be extensively and effectively used in versatile applications, including transparent conductors, UV photodetectors, luminescent devices, and catalysis, which are clearly and comprehensively summarized in this work. Novel functional devices springing up from the newly developed ZnS-based materials are highlighted as well. This review not only provides a scientific insight into the advances of ZnS-based materials, but also touches on the future opportunities in this inspiring field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201802029. relatively high charge recombination rate and low charge transport process inhibit the optoelectronic properties of ZnS as a high-performance photodetector. As a window layer of optoelectronic devices, a lack of high electrical conductivity typically hinders the practical use of ZnS in solar cells, photodiodes, light-emitting devices, etc. As a photocatalyst, the transparency of ZnS becomes a drawback as it suffers from a poor utilization of sunlight.There is not a perfect material, but the potential of developing a material is beyond limitation. The past few years have witnessed extensive designing and engineering of ZnS to explore its potentials in specific applications. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] This review summarizes the recent breakthroughs on ZnS-based materials as excellent candidates in optoelectronic devices, photocatalysis, and other novel functional devices. More importantly, it sheds light on the design principles and fundamental mechanisms of the improved performance of ZnS through strategies such as developing novel nanostructures, bandgap engineering, alloying with other materials, etc. To the best of our knowledge, it is the first comprehensive review on the design principles and material engineering of ZnS for novel/improved properties and intended applications. Briefly, current literature on a variety of ZnS-based structures was first summarized, ranging from 0D to 2D nanostructures. Then, the representative applications of ZnS-based materials are described, which are mainly consisted of four parts, as shown in Figure 1: transparent conductors, UV photodetectors, luminescent devices, and catalysis. Each part contains the latest design strategies of ZnS for the intended applications, fabrication techniques, representative examples, and the state-of-the-art devices. Finally, it outlines the challenges and opportunities in each field. In particular, we provide our perspectives on the future research directions of ZnS in energy and environment.

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Quantum Dot‐Doped Optical Fibers

Zhu,

Sun,

Chai

et al. 2024

Laser & Photonics Reviews

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Gain medium‐doped active optical fibers for optical amplification and long‐range transmission have triggered a lot of researches. Traditional rare‐earth ion‐doped active fibers have non‐adjustable emissions, narrow band luminescence, limited gain enhancement, and other challenges. The unique optical properties of quantum dots (QDs) can further improve the doped optical fibers in the light amplification capacity, temperature sensitivity and to gain a broad‐spectrum coverage and lower laser threshold and other superiorities. However, there are few systematic discussions on the development of the technologies and applications of those QD‐doped optical fibers. In this review, the optical properties, temperature characteristics and optical amplification mechanisms of QD‐doped optical fibers are outlined. Then, the preparation technologies and the applications of QD‐doped optical fibers are highlighted. Additionally, the existing challenges and future development prospects of QD‐doped optical fibers are discussed.

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Coupling quantum dots to optical fiber: Low pump threshold laser in the red with a near top hat beam profile

Cited by 3 publications

References 15 publications

Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo

Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo

Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

Quantum Dot‐Doped Optical Fibers

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