2022
DOI: 10.1021/acs.langmuir.2c02740
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Covalent Grafting of Dielectric Films on Cu(111) Surface via Electrochemical Reduction of Aryl Diazonium Salts

Abstract: Covalent grafting of dielectric films containing polyhedral oligomeric silsesquioxane (POSS) on the surface of Cu(111) is performed by a one-step electrochemical reduction of diazonium salts. This method is efficient and economic and performs in a proton-polar solvent of deionized water and tetrahydrofuran (THF), where the monomer employs an octavinylsilsesquioxane (OVS) containing a POSS core. The eight vinyl bonds contained in OVS are used to participate in aryl radical-initiated polymerization reactions to … Show more

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Cited by 7 publications
(6 citation statements)
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References 80 publications
(117 reference statements)
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“…Further detailed analysis of the changes in the intensity of the C 1s peaks after different modification cycles primarily reveals the presence of “C−N”, “C−O”, and “C−C” bonds. In addition, although the presence of “C‐metal” covalent bonds with a binding energy level of approximately 282 eV is not observed, it is plausible that TiN surfaces undergo passivation and subsequently establish connections through the formation of “Ti−O−C” [9b,27a] . The grafting of diazonium salts onto metal surfaces through “metal‐O−C” covalent bonds has been previously reported and is considered feasible on TiN surfaces containing TiO 2 and TiO x N y components [22a,33] .…”
Section: Resultsmentioning
confidence: 92%
“…Further detailed analysis of the changes in the intensity of the C 1s peaks after different modification cycles primarily reveals the presence of “C−N”, “C−O”, and “C−C” bonds. In addition, although the presence of “C‐metal” covalent bonds with a binding energy level of approximately 282 eV is not observed, it is plausible that TiN surfaces undergo passivation and subsequently establish connections through the formation of “Ti−O−C” [9b,27a] . The grafting of diazonium salts onto metal surfaces through “metal‐O−C” covalent bonds has been previously reported and is considered feasible on TiN surfaces containing TiO 2 and TiO x N y components [22a,33] .…”
Section: Resultsmentioning
confidence: 92%
“…The Cu 2p narrow scan region shows a modified copper state along with metallic Cu(0) at 932.6 and 952.3 eV, with a shoulder shift at high binding energies, Figure c. Cu 2p 3/2 shows as a shoulder at 934.8 eV on both modified films accompanied by the appearance of shakeup satellite peaks which indicates the presence of Cu(II) ions . Moreover, the deconvolution of Cu 2p high-resolution scans, depicted in Figure S5, shows the Cu(0) peak for Au-COOH@Cu is centered at 932.6 eV, while for Au-NO 2 @Cu is centered at 932.4 eV, which reveals a 0.2 eV positive shift in Au-COOH@Cu.…”
Section: Resultsmentioning
confidence: 95%
“…Cu 2p 3/2 shows as a shoulder at 934.8 eV on both modified films accompanied by the appearance of shakeup satellite peaks which indicates the presence of Cu(II) ions. 25 Moreover, the deconvolution of Cu 2p high-resolution scans, depicted in Figure S5, shows the Cu(0) peak for Au-COOH@Cu is centered at 932.6 eV, while for Au-NO 2 @Cu is centered at 932.4 eV, which reveals a 0.2 eV positive shift in Au-COOH@ Cu. This shift indicates a slight increase in the electrostatic attraction of Cu 2p core electrons, leading to a positive shift in the binding energy, which corresponds to increased copper oxidation.…”
Section: Modification and Characterization Of Flexible Coppermentioning
confidence: 96%
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“…Numerous strategies are reported in the literature and several reviews were devoted to this topic as well as the potential applications of the modified surfaces in various fields including, molecular electronics, energy storage and conversion and sensor devices. [6][7][8][9][10][11] All the described strategies for the immobilization of organic layers share a common principle, thus, the molecule should contain anchoring groups (SH, NH2, Si(OR)3, COOH, N2 + ..) and the desired functional groups that will be attached to the extreme electrode interface.…”
Section: Introductionmentioning
confidence: 99%