Covalent pathways in engineering h-BN supported graphene

Abstract

Cross-planar di-vacancies (CPDVs) within stacked graphene hexagonal boron nitride (h-BN) heterostructures provide stabilized covalent links to bridge adjacent graphene and h-BN sheets. It was shown that the CPDVs serve as focal points for cross-planar atom transport between graphene and h-BN, and the chemical nature of interlayer links along with associated cross-planar migration pathways at these defects can be predictively manipulated through modulation of the chemical environment and charge engineering, to achieve consistent B or N doping and simultaneous healing of graphene. The present study proposed a viable approach integrating irradiation, chemical and charge engineering, to produce high-quality graphene with tunable electronic and electrochemical properties, using the h-BN substrate.

Conjugated π electron engineering of generalized stacking fault in graphene and h-BN

“…Graphene and h-BN nanoribbons of width around 3 nm have been constructed for our DFT calculations. The lattice constants of graphene and h-BN are obtained to be 2.46 Å and 2.52 Å respectively, consistent with previous studies [1,2,4,12,13,33] in the literature. The nanoribbons are separated from its periodic image along the armchair direction by a vacuum region of 2 nm, which has been confirmed to sufficiently eliminate image interactions.…”

Recent Advances in Dynamic Homojunction PIN Diodes Based on 2D Materials

“…Some 2D materials, such as h‐BN cannot be used to fabricate channel materials and must be avoided, which is due to the existence of band gaps. Exact control is always an experimental and conceptual challenge even if the band gap value can be controlled using defects, [ 5,7,37–42 ] doping, [ 4,6,40,43,44 ] or strain engineering. [ 37,43 ]…”

“…Some 2D materials, such as h-BN cannot be used to fabricate channel materials and must be avoided, which is due to the existence of band gaps. Exact control is always an experimental and conceptual challenge even if the band gap value can be controlled using defects, [5,7,[37][38][39][40][41][42] doping, [4,6,40,43,44] or strain engineering. [37,43] A photoresist is required for either the elemental doping sources or the chemical compounds by an anion exchange or a surface treatment using a combination of physical and chemical methods in order to produce different polarities in a single nanoflake.…”

Recent advances in TMD interfaces with seamless contacts

“…Some 2D materials, such as h-BN, cannot be used to fabricate channel materials due to the presence of band gaps and must be avoided. Even if the band gap value can be controlled using defects, 6,[13][14][15][16][17][18][19] doping, 16,[20][21][22][23] or strain engineering, 13,20,24 exact control is always an experimental and conceptual challenge. Monolayer MX 2 s have the most tunable band gaps of any 2D material discovered to date.…”