Coverage Layout Design Rules and Insertion Utilities for CMP-Related Processes

Abstract

The continuous scaling needed for higher density and better performance has introduced some new challenges to the planarity processes. This has resulted in new definitions of the layout coverage rules developed by the foundry and provided to the designers. In advanced technologies, the set of rules considers both the global and the local coverage of the front-end-of line (FEOL) dielectric layers, to the back-end-of-line (BEOL) Cu layers and Al layers, to support high-k/Metal Gate process integration. For advance technologies, a new set of rules for dummy feature insertion was developed by the integrated circuit (IC) manufacturers in order to fulfill coverage limits. New models and utilities for fill insertion were developed, taking into consideration the design coverage, thermal effects, sensitive signal line, critical analog and RF devices like inductors, and double patterning requirements, among others. To minimize proximity effects, cell insertion was also introduced. This review is based on published data from leading IC manufacturers with a careful integration of new experimental data accumulated by the authors. We aim to present a typical foundry perspective. The review provides a detailed description of the chemical mechanical polishing (CMP) process and the coverage dependency, followed by a comprehensive description of coverage rules needed for dielectric, poly, and Cu layers used in advanced technologies. Coverage rules verification data are then presented. RF-related aspects of some rules, like the size and the distance of dummy features from inductors, are discussed with additional design-for-manufacturing layout recommendations as developed by the industry.

Effect of Compressive Stress on Copper Bonding Quality and Bonding Mechanisms in Advanced Packaging

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Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy

“…Theoretically, the most significant contribution to the σ xx stress component is ε xx compared to the other strain components. Additionally, during the actual device manufacturing process, the stress can also be impacted by gate sidewall dielectrics, shallow slot isolation dielectrics, silicides, or insulating interlayers, 77,78 resulting in actual improvement to be inferior to the desired outcome. Therefore, microscopically characterizing the strain distribution of the device structure has a significant impact on improving device performance and optimizing design.…”