Impact damage of potato occurs during handling, transportation, sorting, and storage. In this research, scanning electron microscopy (SEM) analysis was employed to investigate the micromechanical changes of potato tissue by applying impact levels of 0 (control), 0.032, 0.185, and 0.335 J over a 16‐week storage period. Specific gravity, moisture content, cell turgor pressure, mechanical properties of tissue were determined. The cell section area, cell perimeter, and cell roundness and impact damage were obtained through the analysis of SEM images. The analysis showed a significant correlation between micromechanical properties and physiological changes for impacted potato tissue during the storage (p < .01). With increasing impact energy and storage time, a statistically significant decrease occurred in water content, cell turgor pressure, and microstructural features. Variations in mechanical properties of non‐impacted potato tissue during storage included increased specific gravity and puncture parameters. The interaction between the impact levels and storage time on the impact damage was statistically significant (p < .05), so that a higher impact energy leads to an increase in the impact damage during storage time. It was indicated the largest distorted microstructure with maximum physiological alterations in storage duration. These results would be of great assistance in optimization and design of pressing machines, which are important for the development of the food industry.
Practical applications
This article examines the microstructural and micromechanical changes in the impacted potato tissue during storage. Moreover, it investigates the importance of controlling potato damage due to dynamic loads during harvest and post‐harvest processes, the role of the impact severity on the damage, and damage spread in tissue during the storage period. The electron microscope images of the impact location are reported in this article, which is helpful for predicting the damage in the potato tissue using finite element simulation.