Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Hu, Jing; Lin, Cong; Peng, Limin; Wei, Tao; Li, Wanfei; Ling, Yun; Liu, Qianqian; Cheng, Miao; Song, Sannian; Zhang, Song; Zhou, Jian; Cheng, Yan; Zheng, Yonghui; Sun, Zhimei; Liu, Bo

doi:10.1016/j.jallcom.2022.164593

Cited by 17 publications

(9 citation statements)

References 60 publications

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“…As demonstrated in Figure b, the data retention of C 34 (Sb 2 Te) 66 increases remarkably from 54 °C@10years to 120 °C@10years; meanwhile, the activation energies of crystallization for C-free Sb 2 Te and C 34 (Sb 2 Te) 66 are 1.95 and 3.09 eV, respectively. The data retention of C 34 (Sb 2 Te) 66 is significantly better than that of conventional GST (∼85 °C@10years) , and transition-metal-doped Sb 2 Te-based materials (∼95 °C@10years). , The above results indicate that the C 34 (Sb 2 Te) 66 nanostrucure material has high thermal stability.…”

Section: Results and Analysesmentioning

confidence: 73%

“…The data retention of C 34 (Sb 2 Te) 66 is significantly better than that of conventional GST (∼85 °C@10years) 38,39 and transition-metal-doped Sb 2 Te-based materials (∼95 °C@ 10years). 22,40 The above results indicate that the C 34 (Sb 2 Te) 66 nanostrucure material has high thermal stability.…”

Section: Results and Analysesmentioning

confidence: 75%

“…However, the unsatisfactory thermal stability and data retention, slow crystallization speed and operation speed (∼50 ns), large density change upon phase transition, resistance drift, etc. limit the wide application of GST. , Besides GST, Sb–Te materials have attracted significant attention of researchers. − The Sb–Te binary alloy exhibits a high crystallization speed due to its growth-dominated crystallization mechanism, which increases the SET operation speed of the device. − However, the inherent poor thermal stability, large grain size, and thickness change of the Sb–Te alloy make it unsuitable for practical device applications.…”

Section: Introductionmentioning

confidence: 99%

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Graphite Carbon-Doped Sb₂Te Nanostructures for Phase-Change Memory Applications

Meng

et al. 2023

ACS Appl. Nano Mater.

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High thermal stability, fast operation speed, low thickness variation, and low resistance drift of phase-change nanomaterials are the essential characteristics in phase-change memory (PCM) applications. In this work, we put forward a graphite carbon-doped Sb2Te (C-Sb2Te) chalcogenide with semiconductor process compatibility. Our results prove that the proposed C-Sb2Te has excellent thermal stability and high operation speed. More importantly, the thickness change and resistance drift are only 0.89% and 0.0149, respectively. The C-Sb2Te-based memory device exhibits a high switching speed to the instrument test limit (5 ns) with a large resistance ratio, low operation voltage (2 V), and low power consumption (6.9 pJ). The proposed C-Sb2Te nanostructure material exceeds both conventional Ge2Sb2Te5 and transition-metal-doped Sb2Te materials in terms of its performance. Ab initio molecular dynamics simulations reveal that C–C and C–Sb bonds as well as C–C chains are formed in C-Sb2Te, and C doping constrains phase transition in a small region and refines grains of C-Sb2Te, thus resulting in the high performance. Our study suggests that C-Sb2Te is a potential candidate for high-speed, high-thermal-stability, and high-reliability PCM applications.

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Section: Results and Analysesmentioning

confidence: 73%

Section: Results and Analysesmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 99%

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Graphite Carbon-Doped Sb₂Te Nanostructures for Phase-Change Memory Applications

Meng

et al. 2023

ACS Appl. Nano Mater.

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“…The non-linear optical properties of these materials open up prospects for their application in optoelectronics [6][7][8]. These compositions are also advanced materials for manufacturing non-volatile memory based on the phase transition effect (PCM) [9][10][11][12][13][14][15]. The development of multi-level memory cells that are competitive with modern flash memory devices is underway [16,17].…”

Section: Introductionmentioning

confidence: 99%

“…In order to increase the stability and performance of devices, various dopants are used [12,13,15,[21][22][23][24]. In particular, the use of carbon carbide leads to an increase in the crystallization temperature and an increase in the number of PCM memory rewriting cycles [24].…”

Section: Introductionmentioning

confidence: 99%

The crystallization of thin Sb₂Te films with vacuum annealing and an electron beam

Yushkov¹,

Kolosov²

2023

Chim.Tech.Acta

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Thin Sb2Te films with a thickness gradient were studied via transmission electron microscopy. The processes of forced crystallization were examined with thermal annealing and an electron beam. The crystallization’s general tendencies, including competitive nucleation and growth crystallization, were revealed. As the thickness of the sample increases, the size of the crystals growing in the film enlarges. As the temperature increases, the number of crystals in the film grows. Crystallization under the action of an electron beam occurs mainly by nucleation mechanism.

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Picosecond Operation of Optoelectronic Hybrid Phase Change Memory Based on Si‐Doped Sb Films

Liu,

Wei,

Zheng

et al. 2024

Adv Funct Materials

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Phase‐change random access memory is anticipated to break the bottleneck of the “storage wall” due to its advantages in simultaneous data storage and in‐memory computing. However, operation speed constrains its application scenarios. Antimony (Sb) thin film has ultrafast phase change speeds, low power consumption, and a straightforward chemical composition. In this study, silicon (Si) doping is employed to enhance the stability of pure Sb while achieving both ultrafast operational speeds and superior thermal stability concurrently. By utilizing optoelectronic hybrid phase change memory, the SET and RESET operation speeds can reach as fast as 26 and 13 ps, respectively, when using Si‐doped Sb films. The absence of the Si─Sb bond results in simple cubic nuclei within the amorphous film, which is posited as the structural basis for the high operational speed. These novel insights into ultrafast speed and phase mechanisms are poised to have valuable evidence for future high‐speed memory designs.

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Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Cited by 17 publications

References 60 publications

Graphite Carbon-Doped Sb₂Te Nanostructures for Phase-Change Memory Applications

Graphite Carbon-Doped Sb₂Te Nanostructures for Phase-Change Memory Applications

The crystallization of thin Sb₂Te films with vacuum annealing and an electron beam

Picosecond Operation of Optoelectronic Hybrid Phase Change Memory Based on Si‐Doped Sb Films

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Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Cited by 17 publications

References 60 publications

Graphite Carbon-Doped Sb2Te Nanostructures for Phase-Change Memory Applications

Graphite Carbon-Doped Sb2Te Nanostructures for Phase-Change Memory Applications

The crystallization of thin Sb2Te films with vacuum annealing and an electron beam

Picosecond Operation of Optoelectronic Hybrid Phase Change Memory Based on Si‐Doped Sb Films

Contact Info

Product

Resources

About

Graphite Carbon-Doped Sb₂Te Nanostructures for Phase-Change Memory Applications

Graphite Carbon-Doped Sb₂Te Nanostructures for Phase-Change Memory Applications

The crystallization of thin Sb₂Te films with vacuum annealing and an electron beam