Creation of atomically flat Si{111}7 × 7 side-surfaces on a three-dimensionally-architected Si(110) substrate

Hattori, Azusa N.; Hattori, Ken; Takemoto, Shohei; Daimon, Hiroshi; Tanaka, Hidekazu

doi:10.1016/j.susc.2015.09.002

Cited by 10 publications

(23 citation statements)

References 8 publications

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“…Ewald sphere in 3D RSM, for 3D crystal. 3D fabricated materials, the authors have demonstrated that not only substrate surfaces but also surfaces inclined from or perpendicular to a substrate plane exhibit atomically ordered structures where surface spots elongated along directions inclined from or perpendicular to the substrate normal direction appear in RHEED patterns ( Figure 5(b)) [6,7,9]. We emphasize that a simple surface property of 3D fabricated materials, that is, a surface direction, can be confirmed by the elongation of surface spots.…”

Section: Schematic Of Relationship Between Diffraction Spots and Recimentioning

confidence: 63%

“…We can see that the diffraction spots on the left side are slightly elongated in the horizontal direction, which is a characteristic of a RHEED pattern from a sidesurface [6]. The diffractions from the top-/bottom-surfaces disappeared and those from the left-side surface remained when we changed θ from +0.4°to 0.0°.…”

mentioning

confidence: 83%

“…The process parameters were an ICP source power of 300 W, a bias power of 10 W, and a working pressure of 4 Pa. Mixture gases of 10 sccm SF 6 , 5 sccm O 2 , and 200 sccm Ar were used in the etching cycle, and 40 sccm C 4 F 8 , 5 sccm O 2 , and 200 sccm Ar were used in the passivation process [6][7][8][9]. Depending on dry RIE conditions, various curved structures from trapezoid to triangle shapes were obtained.…”

Section: Sample Fabrication With Combination Of Dry and Wet Etching Pmentioning

confidence: 99%

“…Characteristic LEED patterns were observed when the sample was rotated; the electron beam probed both a 111 ÀÁ side-surface and a 110 ðÞ top-surface. An example with an incident angle of $37°i s shown in Figure 10(b), which reflects surface reconstructions for both the figured 111 ÀÁ 7Â7 side-surface and the pristine 110 ðÞ 16Â2 top-surface [6]. The LEED patterns are in good agreement with those simulated by considering the crystal orientation and electron beam (i.e., the cross sections of the reciprocal lattice rods and an Ewald sphere [22]) shown in the lower-right panels of Figure 10.…”

Section: Rheed Observation Of 3d Structured Samplesmentioning

confidence: 99%

“…Low-energy electron diffraction (LEED) is also a conventional and nondestructive surface observation technique [5]. To apply these techniques to 3D structured samples with various oriented surfaces, instead of 2D planar samples, an appropriate alignment of the incident electron beam considering the configuration in 3D space is indispensable [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Creation and Evaluation of Atomically Ordered Side- and Facet-Surface Structures of Three-Dimensional Silicon Nano-Architectures

Hattori¹,

Hattori²

2020

21st Century Surface Science - A Handbook

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The realization of three-dimensional (3D)-architected nanostructures, that is, the transformation from novel two-dimensional (2D) film-based devices to 3D complex nanodevices, is of crucial importance with the progress of scaling down devices to nanometer order. However, little attention has been devoted to controlling the atomic ordering and structures of side-surfaces on 3D structures, while techniques for controlling and investigating 2D surfaces, namely, surface science, have been established only for planar 2D surfaces. We have established an original methodology that enables atomic orderings and arrangements of surfaces with arbitrary directions to be observed on 3D figured structures by developing diffraction and microscopy techniques. An original technique, namely, directly and quantitatively viewing the side- and facet-surfaces at the atomic scale by reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED), can be used to determine process parameters in etching. This chapter introduces methods of evaluation by RHEED and LEED based on a reciprocal space map and methods of creating various atomically flat 111 and {100} side-surfaces of 3D Si nano-architectures and tilted 111 facet-surfaces fabricated by lithography dry and wet etching processes, followed by annealing treatment in vacuum.

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Section: Schematic Of Relationship Between Diffraction Spots and Recimentioning

confidence: 63%

mentioning

confidence: 83%

Section: Sample Fabrication With Combination Of Dry and Wet Etching Pmentioning

confidence: 99%

Section: Rheed Observation Of 3d Structured Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Creation and Evaluation of Atomically Ordered Side- and Facet-Surface Structures of Three-Dimensional Silicon Nano-Architectures

Hattori¹,

Hattori²

2020

21st Century Surface Science - A Handbook

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Atomically Architected Silicon Pyramid Single-Crystalline Structure Supporting Epitaxial Material Growth and Characteristic Magnetism

Irmikimov

Pamasi

Hattori

et al. 2021

Crystal Growth & Design

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The control of three-dimensional (3D) geometrical shapes is one of important approaches that contribute the development of new functionalities in material science. We produced 3D Si pyramids with atomically flat and reconstructed {111} facet surfaces supporting atomically resolved material growth in 3D space for the first time. The complex 4-fold clean 7×7 and 2×2-Fe low-energy electron diffraction (LEED) patterns reflecting the pyramidal geometry showed the realization of atomically reconstructed facet surfaces on the 3D patterned Si. Cross-sectional transmission electron microscopy (TEM) revealed the epitaxial heterointerfaces between Fe nanofilm and Si facet surfaces. The LEED and TEM results indicate the applicability of the Si pyramid as a supporting substrate for arbitrarily oriented 3D functional structures. The pyramidal Fe nanofilm displayed magnetic properties depending on the geometric shape, owing to the facet surfaces and the sharp facet edges. The unique anisotropic magnetization behavior of the 3D pyramid shape indicates that the epitaxial growth of an arbitrary geometry by virtue of the atomically ordered substrate surfaces in 3D space can contribute to the modification of the functionality.

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Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

Zhu

Qimin

et al. 2021

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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To achieve high-quality and low-cost ZnTe epitaxial films, a low-temperature (LT, 200 °C) ZnSe buffer layer with a thickness of 5 nm was grown on Si (111) wafers prior to the epitaxy of ZnTe layers by molecular beam epitaxy. Reflection high-energy electron diffraction patterns reveal that ZnTe epilayers grown at 335 °C with a thickness of 100 nm on the LT-ZnSe buffer layer present a completely two-dimensional growth mode. Film surfaces present smooth and flat morphology with the lowest surface roughness of ∼2.2 nm at a Te/Zn beam equivalent pressure ratio of 1.6. X-ray diffraction θ-2θ scanning indicates that the out-of-plane structure of ZnTe films is highly preferred with the (111) growth orientation of ZnSe/Si. X-ray diffraction φ scanning further confirms that the in-plane structure of ZnTe epilayer is also a single-crystal orientation growth. Thus, high-quality ZnTe (111) single-crystal epilayer with the lowest full-width at half-maximum of ∼200 arc sec and the smallest dislocation density of ∼1.12 × 108 cm−2 was grown on Si (111) wafers. In addition, the ZnSe buffer layer could alleviate the residual stress effectively for the heteroepitaxy of Si wafers. The most balanced residual stress for ZnTe/ZnSe/Si with σx of ∼96.5 MPa and σy of ∼94.2 MPa was obtained, which is essential for achieving high-performance and good mechanical properties of ZnTe-based devices.

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Creation of atomically flat Si{111}7 × 7 side-surfaces on a three-dimensionally-architected Si(110) substrate

Cited by 10 publications

References 8 publications

Creation and Evaluation of Atomically Ordered Side- and Facet-Surface Structures of Three-Dimensional Silicon Nano-Architectures

Creation and Evaluation of Atomically Ordered Side- and Facet-Surface Structures of Three-Dimensional Silicon Nano-Architectures

Atomically Architected Silicon Pyramid Single-Crystalline Structure Supporting Epitaxial Material Growth and Characteristic Magnetism

Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

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