Creation of permanent lattice defects via exciton self-trapping into molecular states in Xe matrix

Abstract

Electronic excitation is shown to affect the structural properties of the Xe matrix at low temperatures. The lattice defect creation was studied using the selective vacuum ultraviolet (VUV) spectroscopy methods. The samples were excited by synchrotron radiation in the range of excitonic absorption. The temporal evolution of the intensity distribution in the band of molecular type self-trapped exciton luminescence was analyzed. A direct evidence for the creation and accumulation of point lattice defects in solid Xe via the excitonic mechanism was obtained for the first time. The model of permanent lattice defect creation and transformation is discussed.

Kinetic study of inelastic radiation-induced processes in rare-gas cryocrystals

“…2,a,b), and displacement of M-STE from centrosymmetric position in the <110> direction and reorientation to the <100> direction to stabilize the defect (Fig. 2,b,c) [17,18]. In the case of solid Ne the excited-state mechanism of A-STE to Frenkel pair conversion occurs by self-trapping of exciton in the perfect lattice (Fig.…”

“…In our case, only the point defects, Frenkel-pairs, may emerge in the bulk of the crystal. Such an excited-state (ES) mechanism of the large-scale atomic movement was studied recently [5,15,17]. Fig.…”

Photo- and thermally stimulated relaxation processes in pre-irradiated atomic solids

“…Due to combination of weak van der Waals interatomic forces with a strong electron-lattice interaction Rare-gas solids (RGS) offer the best opportunity to get new insight into the problem. Such phenomena as electronically induced lattice defect formation (Song and Williams, 1996;Savchenko et al, 1994Savchenko et al, , 1998Savchenko et al, , 2005aFu and Song, 1997) and related surface phenomenon -electronically induced sputtering of the lattice atoms (Song and Williams, 1996;Johnson and Schou, 1993;Zimmerer, 1994Zimmerer, , 1998Hudel et al, 1991;Belov et al, 2000;Bass et al, 1999;Grigorashchenko et al, 1997;Dujardin et al, 1998;Savchenko et al, 1997;Arakawa et al 2003 and References 2 therein), so-called desorption induced by electronic transitions (DIET), were found in RGS. Several mechanisms were suggested to explain the DIET from these atomic solids.…”

Impurity and vacancy effects in graphene

“…In this respect, our results contribute to the overall topic of the present issue dedicated to Prof. E.V. Savchenko's jubilee and her notable works on the electronically induced defects, especially vacancies, in cryocrystals [16][17][18].…”