2016
DOI: 10.1007/s10853-015-9687-4
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Creep behavior of nanocrystalline Au films as a function of temperature

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Cited by 18 publications
(6 citation statements)
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“…Karanjgaokar et al investigated the creep of gold films in the same temperature range 28 as the present work and also observed a transition in deformation mechanisms. They measured similar stress exponent values (in the 3-5 range) but evidenced a different trend, with the stress exponent increasing with temperature.…”
Section: B Comparison To Prior Studiessupporting
confidence: 68%
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“…Karanjgaokar et al investigated the creep of gold films in the same temperature range 28 as the present work and also observed a transition in deformation mechanisms. They measured similar stress exponent values (in the 3-5 range) but evidenced a different trend, with the stress exponent increasing with temperature.…”
Section: B Comparison To Prior Studiessupporting
confidence: 68%
“…This procedure is commonly used in macroscopic creep testing. 27 On thin film samples, the repeated loading scheme was found to be unproblematic, 28 as long as the films had been previously annealed and the stress increments were large enough. This holds true for the present study, where samples tested with and without prior stress increment experienced similar creep rates.…”
Section: Creep Testingmentioning
confidence: 99%
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“…Figure 8 exhibits the creep curves of segregated Ni-Mo (3 at.%) sample with grain size of 10.9 nm under an external stress of 1.0 GPa at different temperatures. It can be seen that for the segregated NC material, the creep rate increases with the increase of temperature, which is similar to that of pure NC materials [19,20,44]. This is because all creep mechanisms are essentially thermal activation processes.…”
Section: Influences Of Grain Size and Temperaturesupporting
confidence: 52%
“…Meanwhile, in the previous studies, the methods for the test of the thermal-mechanicalstress effects and creep effects in MEMS structures include direct methods, such as microtension [11,13,14], nanoindentation [6,15], and indirect methods, such as optical curvature [4,16,17], voltage [18][19][20], capacitance [9,10,21], and so on. However, these methods are not suitable for DC-contact RF MEMS switches.…”
Section: Introductionmentioning
confidence: 99%