Critical behavior of the electrical resistance of very thin Cr films

Lourens, J. A. J.; Arajs, Sigurds; Helbig, H. F.; Mehanna, E. A.; Cheriet, L.

doi:10.1103/physrevb.37.5423

Cited by 24 publications

(16 citation statements)

References 8 publications

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“…As shown in Fig. 5(b), µ exhibits no distinct substrate temperature dependence and has a value of 1.12-1.15, being consistent with the theoretical and experimental value (1.1-1.3) in the 2D percolation [10,11]. It is evident from Fig.…”

Section: Resultssupporting

confidence: 91%

Coalescence process of monodispersed Co cluster assemblies

Peng

Konno

Wakoh

et al. 2001

The European Physical Journal D

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Cluster-cluster coalescence process of monodispersed Co clusters with mean diameter d = 8.5 and 13 nm deposited a plasma-gas-condensation-type cluster beam deposition system was investigated by in situ electrical conductivity measurements and ex situ scanning electron microscopy (SEM) and transmission electron microscopy (TEM), and analyzed by percolation concept. The electrical conductivity measurement and TEM observation indicated that, below temperature T ≈ 100 • C, the Co clusters in the assemblies maintain their original structure as deposited at room temperature, while that the inter-cluster coalescence takes place at T > 100 • C, although the size distribution and the interface morphology of the clusters showed no marked change at substrate temperatures Ts ≤ 200 • C.

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Section: Resultssupporting

confidence: 91%

Coalescence process of monodispersed Co cluster assemblies

Peng

Konno

Wakoh

et al. 2001

The European Physical Journal D

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“…We show the comparison of our results with the leastsquare method used earlier by various authors 21,22 for the calculation of the I-M transition region and the critical exponent of conductivity. Sliding least-square fit using Eq.…”

Section: B Study Of Infinite Cluster: An Insulator-metal Transitionmentioning

confidence: 86%

“…They observed that the size and shape of islands change with temperature. This method has been applied for various thin films, such as, for example, silver, 11 indium oxide, 12 platinum, 14 antimony, 20 nickel, 21 chromium, 22 and bismuth films. 20 The determination of insulator to metallic transition region and fractional surface coverage and hence critical coverage using electron microscopy may be erroneous due to the contamination of ultrathin film when exposed to air.…”

Section: Introductionmentioning

confidence: 99%

“…20 The determination of insulator to metallic transition region and fractional surface coverage and hence critical coverage using electron microscopy may be erroneous due to the contamination of ultrathin film when exposed to air. The I-M transition region and the critical exponent of conductivity have been determined by the least-square fit method 21,22 of in situ resistance data. This method has been applied for various thin films, such as, for example, silver, 11 indium oxide, 12 platinum, 14 antimony, 20 nickel, 21 chromium, 22 and bismuth films.…”

Section: Introductionmentioning

confidence: 99%

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Nucleation, growth, percolation, and amorphous to crystalline transition of ultrathin molybdenum films

Nayak

Lodha

Nandedkar

2006

Journal of Applied Physics

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We report on the nucleation, growth, percolation, and crystalline transition of ultrathin layers of molybdenum deposited on float glass substrate by in situ electrical properties. The transition from insulating to metallic state (I-M) is shown as a function of molybdenum film thickness and sheet resistance. In the island growth regime, the electrical conductance (G) has two exponential dependencies on thickness (t), namely, logG−B1∝t and logG−B2∝t, explained as the anisotropic and isotropic growth of islands, respectively. In the I-M transition region, the electrical conductance of the films follows the scaling law G∝(t−tc)q. The value of critical exponent q determined from the present experiments agrees well with the theoretically predicted values for the critical exponent of conductivity in a two-dimensional percolating system. The amorphous to crystalline transition is also observed. The microscopic picture of film growth, derived from in situ sheet resistance measurements shows good agreement with that predicted by the percolation theory.

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“…The changing trend is caused by changes in the state of the intermediate copper layer. According to the growth nucleation theory of metal thin film, in the initial growth stage the film is mainly composed of island-like particles, as shown in Figure 5a [42,43]. As the growth continues, the island-like clusters will grow and combine to form a semi-continuous porous network film as depicted in Figure 5b.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films

Han

Zhao

et al. 2019

Materials

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Transparent conductive IWO/Cu/IWO (W-doped In2O3) films were deposited on quartz substrates by magnetron sputtering of IWO and Cu in the Ar atmosphere. The X-ray diffraction (XRD) patterns identified the cubic iron–manganese ore crystal structure of the IWO layers. The influence of the thickness of the intermediate ultra-thin Cu layers on the optical and electrical properties of the multilayer films was analyzed. As the Cu layer thickness increases from 4 to 10 nm, the multilayer resistivity gradually decreases to 4.5 × 10−4 Ω·cm, and the optical transmittance in the mid-infrared range increases first and then decreases with a maximum of 72%, which serves as an excellent candidate for the mid-infrared transparent electrode.

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Critical behavior of the electrical resistance of very thin Cr films

Cited by 24 publications

References 8 publications

Coalescence process of monodispersed Co cluster assemblies

Coalescence process of monodispersed Co cluster assemblies

Nucleation, growth, percolation, and amorphous to crystalline transition of ultrathin molybdenum films

Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films

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