Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides

Wang, Yan; Sarkar, Soumya; Yan, Han; Chhowalla, Manish

doi:10.1038/s41928-024-01210-3

Nat Electron

2024

DOI: 10.1038/s41928-024-01210-3

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Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides

Yan Wang,

Soumya Sarkar,

Han Yan

et al.

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Cited by 9 publications

References 86 publications

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Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe₂ Field‐Effect Transistors

Chen,

Zhang,

King

et al. 2024

Adv Elect Materials

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Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field‐effect transistors (FETs) in complementary metal–oxide–semiconductor (CMOS) technology. 2D semiconductors, such as MoS2 and WSe2, are promising channel materials for beyond‐silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material. This work demonstrates extension doping with low‐resistance contacts for monolayer WSe2 p‐FETs. Self‐limiting oxidation transforms a bilayer WSe2 into a hetero‐bilayer of a high‐work‐function WOxSey on a monolayer WSe2. Then, damage‐free nanolithography defines an undoped nano‐channel, preserving the high on‐current of WOxSey‐doped FETs while significantly improving their on/off ratio. The insertion of an amorphous WOxSey interlayer under the contacts achieves record‐low contact resistances for monolayer WSe2 over a hole density range of 1012 to 1013 cm−2 (1.2 ± 0.3 kΩ µm at 1013 cm−2). The WOxSey‐doped extension exhibits a sheet resistance as low as 10 ± 1 kΩ □−1. Monolayer WSe2 p‐FETs with sub‐50 nm channel lengths reach a maximum drain current of 154 µA µm−1 with an on/off ratio of 107–108. These results define strategies for nanometer‐scale selective‐area doping in 2D FETs and other 2D architectures.

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Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe₂ Field‐Effect Transistors

Chen,

Zhang,

King

et al. 2024

Adv Elect Materials

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Interfaces in two-dimensional transistors: Key to pushing performance and integration

Liu,

Wu,

Zhang

et al. 2025

Materials Science and Engineering: R: Reports

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Two-Dimensional ZrS₂ and HfS₂ for Making Sub-10 nm High-Performance P-Type Transistors

Hu,

Huang,

et al. 2024

J. Phys. Chem. Lett.

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transition metal dichalcogenide (TMDC) semiconductors have been recognized as reliable candidates for future sub-10 nm physical gate length field-effect transistors (FETs). However, the device performance of 2D P-type devices is far inferior to that of N-type devices, which seriously hinders the development of complementary metal-oxide-semiconductor (CMOS) integrated circuits. Herein, we presented that two new 2D TMDC channel materials, ZrS 2 and HfS 2 , can realize high-performance Ptype MOSFETs through first-principles quantum transport simulations. Different from the 2D MoS 2 and WSe 2 , the continuous in-plane p-orbitals at the valence band edge of 2D ZrS 2 and HfS 2 lead to a small hole effective mass of 0.24 m 0 . As a result, 2D ZrS 2 and HfS 2 P-type MOSFETs with 10 nm gate length possess an on-state current (I on ) as high as 2000 μA/μm. Moreover, even when the gate length shrinks to 5 nm, the I on can also reach ∼1500 μA/μm with the energy delay product ranging from 3 × 10 −30 to 1 × 10 −29 Js/μm, which are better than many other 2D P-type MOSFETs like MoS 2 and WSe 2 . Our work demonstrates that 2D ZrS 2 and HfS 2 are competitive channel materials for constructing future sub-10 nm P-type high-performance FETs.

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Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides

Cited by 9 publications

References 86 publications

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe₂ Field‐Effect Transistors

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe₂ Field‐Effect Transistors

Interfaces in two-dimensional transistors: Key to pushing performance and integration

Two-Dimensional ZrS₂ and HfS₂ for Making Sub-10 nm High-Performance P-Type Transistors

Contact Info

Product

Resources

About

Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides

Cited by 9 publications

References 86 publications

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Interfaces in two-dimensional transistors: Key to pushing performance and integration

Two-Dimensional ZrS2 and HfS2 for Making Sub-10 nm High-Performance P-Type Transistors

Contact Info

Product

Resources

About

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe₂ Field‐Effect Transistors

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe₂ Field‐Effect Transistors

Two-Dimensional ZrS₂ and HfS₂ for Making Sub-10 nm High-Performance P-Type Transistors