Critical Level of Nitrogen Incorporation in Silicon Oxynitride Films: Transition of Structure and Properties, toward Enhanced Anticorrosion Performance

Abstract

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Optical and structural properties of silicon nitride thin films deposited by plasma enhanced chemical vapor deposition for high reflectance optical mirrors

“…These values are in a good agreement with various literature reports [21], [22], [23], [24]. Moreover, in the case of SiOxNy thin film, the shoulder peak at 102.7 eV is visible that corresponds to the silicon oxynitride [23], [25]. XPS peak intensities are sensitive to the surrounding chemical environment, so the peak areas determined in this way reflect the relative amount of Si in that particular chemical state.…”

Silicon Oxynitride Coatings Are Very Promising for Inert and Durable Pharmaceutical Glass Vials

“…(A) BOE rate as a function of the nitrogen content and T d . (B) BOE etching rate of SiO x N y from BMDSD (light blue squares), TDMSA (gray squares), and SiO 2 and SiO x films processed at 550 °C from TEOS (green triangle) and HMDS-TEOS (red triangle), respectively. Power trend lines were added for visual aid.…”

“…Depositions on Si (100) wafer coupons (Neyco, 32 × 24 mm 2 ) were performed in an in-house designed horizontal tubular CVD reactor, schematized in Figure S1 and detailed in refs , . The reactor setup allowed the treatment of multiple samples in a row, placed deliberately in regions with distinct local temperatures (described in the Supporting Information, SI), as a means to extract kinetic information for the elucidation of the SiO x N y deposition mechanism.…”

“…600−650 °C thanks to the use of tris(dimethylsilyl)amine (TDMSA) as a singlesource (Si, N) precursor without, however, meeting the abovementioned temperature target. 27 Further decrease of T d can in principle be achieved by implementing trisilylamine-type chemistries with specifically engineered structures, for example, replacement of the methyl ligands on the silicon atoms by hydrogen and amine substituents. Moreover, limiting the number of stabilizing amine substituents confers higher reactivity compared to SiH x (NR 2 ) 4−x aminosilane-type chemistries with low x values.…”

“…We have recently decreased this deposition temperature ( T d ) range to ca. 600–650 °C thanks to the use of tris­(dimethylsilyl)­amine (TDMSA) as a single-source (Si, N) precursor without, however, meeting the abovementioned temperature target . Further decrease of T d can in principle be achieved by implementing trisilylamine-type chemistries with specifically engineered structures, for example, replacement of the methyl ligands on the silicon atoms by hydrogen and amine substituents.…”