Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n+ type doped GaAs

Abstract

Electroreflectance of surface-intrinsic-n + type doped GaAs has been measured over a various biased voltage. The spectra have exhibited many Franz-Keldysh oscillations (FKOs) above band gap energy E g . The electric field F and critical point energy E c can be determined from the slope and intercept of FKOs fitting. Hence, we can obtain E c as a function of F. In most of previous works, E c is taken as E g . However, it was found that E c increases with F in this work. In order to explain this, the gain of energy of electron and hole in F was discussed.

Efficient and Saturated Red Light‐Emitting Electrochemical Cells Based on Cationic Iridium(III) Complexes with EQE up to 9.4 %

“…The shift in the recombination zone upon increasing guest doping may be caused by altered carrier mobilities affected by the enhanced energetic disorder in the host–guest films. Such an energetic disorder comes from the dipolar disorder owing to the interaction between charge carriers and the randomly oriented permanent dipoles of the guest molecules . From the data shown in Figure a–d, we speculate that the permanent dipole of complex RED3 may exhibit stronger interactions with holes than with electrons.…”

“…[60] Therefore, ar ecom- Such an energetic disorder comesf rom the dipolar disorder owing to the interaction between chargec arriers and the randomly oriented permanentd ipoleso ft he guest molecules. [61,62] From the data shown in Figure 10 a-d, we speculate that the permanent dipole of complex RED3 may exhibit stronger interactions with holes than with electrons. More impeded holes than electrons owing to increased doping of complex RED3 lead to migration of the recombination zone toward the anode.…”