Articles you may be interested inMicrobeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates J. Appl. Phys. 97, 063512 (2005); 10.1063/1.1862769 Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition

Electroreflectance of surface-intrinsic-n + type doped GaAs has been measured over a various biased voltage. The spectra have exhibited many Franz-Keldysh oscillations (FKOs) above band gap energy E g . The electric field F and critical point energy E c can be determined from the slope and intercept of FKOs fitting. Hence, we can obtain E c as a function of F. In most of previous works, E c is taken as E g . However, it was found that E c increases with F in this work. In order to explain this, the gain of energy of electron and hole in F was discussed.