Critical properties of Cu 6 Sn 5 in electronic devices: Recent progress and a review

Mu, Dekui; McDonald, Stuart D.; Read, J.; Huang, Han; Nogita, Kazuhiro

doi:10.1016/j.cossms.2015.08.001

Cited by 96 publications

(38 citation statements)

References 187 publications

(305 reference statements)

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“…Therefore, the factor controlling the formation and growth morphologies of interfacial TiC should be the flux of C atoms dissolved from diamond grits. According to the general sequence of solid/liquid interface reaction [22], the prerequisite for the initiation of interface reaction between diamond and liquid Ti is that some C atoms in…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures

Liao

Wang

et al. 2017

International Journal of Refractory Metals and Hard Materials

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In this paper, interfacial reaction between diamond grit and Sn-6Ti alloy was systematically studied at brazing temperatures from 600 to 1030 o C. A thin and uniform layer of scallop-like nano-sized TiC grains was formed after brazing for 30 minutes at 600 o C, and interfacial TiC grains subsequently coarsened as brazing temperature increased to 740 and 880 o C. Strip-like columnar TiC grains in a bilayer structure was further grown as brazing temperature increased to 930 o C. After brazing at 1030 o C, a dense layer of columnar TiC grains were formed. Based on the TEM micrographs of interfacial TiC, the formation and evolution of the growth morphologies of interfacial TiC was believed to be controlled by the diffusion of C flux from diamond grits, which is dependent on the brazing temperatures.

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Section: Accepted Manuscriptmentioning

confidence: 99%

Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures

Liao

Wang

et al. 2017

International Journal of Refractory Metals and Hard Materials

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“…It has been confirmed in several publications [25,26,32,38,39] that as little as 1 at-% of nickel in the Cu6Sn5 phase stabilizes the η-Cu6Sn5. Reported benefits of having the η-Cu6Sn5 present in the interconnection are reduced thermal expansion, increased elastic modulus and hardness as well as improved creep properties [19,21,38,[40][41][42]. In addition, stresses related to polymorphic transformation due to volumetric difference of the hexagonal and monoclinic allotropies are avoided [38], which can inhibit cracking of the intermetallic compounds.…”

Section: Introductionmentioning

confidence: 77%

“…Especially nickel has exhibited interesting results regarding the Cu-Sn interfacial microstructure and particularly the Cu6Sn5 phase [26,28,29,31]. It has been confirmed in several publications [25,26,32,38,39] that as little as 1 at-% of nickel in the Cu6Sn5 phase stabilizes the η-Cu6Sn5. Reported benefits of having the η-Cu6Sn5 present in the interconnection are reduced thermal expansion, increased elastic modulus and hardness as well as improved creep properties [19,21,38,[40][41][42].…”

Section: Introductionmentioning

confidence: 99%

“…Reported benefits of having the η-Cu6Sn5 present in the interconnection are reduced thermal expansion, increased elastic modulus and hardness as well as improved creep properties [19,21,38,[40][41][42]. In addition, stresses related to polymorphic transformation due to volumetric difference of the hexagonal and monoclinic allotropies are avoided [38], which can inhibit cracking of the intermetallic compounds. In order to apply platinum as a contact metallization, it is highly important to examine the formation of the bonding microstructure and it's evolution under annealing as well as possible interaction to Cu/Sn IMCs as the thermodynamic description of Cu-Pt-Sn ternary system is not available in the literature.…”

Section: Introductionmentioning

confidence: 99%

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The effect of platinum contact metallization on Cu/Sn bonding

Rautiainen

Ross

Vuorinen

et al. 2018

J Mater Sci: Mater Electron

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In this work, formation and evolution of microstructures in CuSn/Pt bonding were investigated after 320 °C reflow process as well as after high temperature storage test at 150 °C. Sputtered thin film platinum on silicon wafer and high purity platinum sheet were applied as contact metallizations for electroplated copper-tin based bonding metallurgy. As bonded microstructure showed PtSn4 intermetallic compound growth at the Pt/Sn interface, and both Cu6Sn5 and Cu3Sn phases formed at the Cu/Sn interface. Both hexagonal and monoclinic Cu6Sn5 were found to coexist after 1000 h high temperature storage test. Platinum was discovered to dissolve into the Cu6Sn5 phase during soldering process and form (Cu,Pt)6Sn5 intermetallic compound exhibiting hexagonal allotropy. Meanwhile, under annealing, monoclinic Cu6Sn5 phase layer without platinum was observed to form between (Cu,Pt)6Sn5 grains and tin. Thermodynamic analysis was performed in order to reason the effects of Pt on the phase equilibria and phase stabilities. Results show that platinum has a significant impact on the stability of hexagonal Cu6Sn5.

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“…While it exhibits good soldering properties due to its eutectic microstructure, [1,2] stable (Cu,Ni) 6 Sn 5 intermetallics (IMCs) [2][3][4][5][6][7] and suppression of Cu 3 Sn growth, [2] further modifications in terms of increasing hardness via elemental additions could potentially improve performance during thermal cycling. In general, to improve the performance of Sn based solders in thermal cycling, a barrier to the movement of dislocations through the bulk of the solder alloy is required.…”

Section: Introductionmentioning

confidence: 99%

Effects of Bismuth in Sn-Cu Based Solder Alloys and Interconnects

Nogita

Salleh

Smith

et al. 2017

Transactions of The Japan Institute of Electronics Packaging

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Additions of 1.5wt%Bi to Sn-0.7wt%Cu-0.05wt%Ni (SN100C) were investigated for their influence on mechanical properties and the intermetallic (IMC) layer formed between the solder and Cu substrates. Solder balls of Sn-0.7wt%Cu (Sn07Cu), SN100C, Sn-0.7wt%Cu-0.05wt%Ni-1.5wt%Bi (SN100CV) and Sn-3wt%Ag-0.5wt%Cu (SAC) were reflowed onto Cu ball grid arrays (BGAs). They were examined in the as reflowed condition and after a heat treatment of annealing at 150°C up to 1,500 hours. The mechanical properties of SN100C, SN100CV and SAC solder balls were investigated by nano-indentation, and cross-sections of the interfacial IMC layer were observed by SEM to determine the morphology and average interfacial IMC layer thickness. It was found that the effect of Bi additions was to increase the lattice parameters and alter the mechanical properties. The near-eutectic microstructure and suppression of Cu 3 Sn at the IMC layer that are associated with Ni additions are not altered by the presence of 1.5wt%Bi.

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Critical properties of Cu 6 Sn 5 in electronic devices: Recent progress and a review

Abstract: READ, J.; HUANG, H.; NOGITA, K.; Curr. Opin. Solid State Mater. Sci. 20 (2016) 2, 55-76, http://dx.

Cited by 96 publications

References 187 publications

Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures

Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures

The effect of platinum contact metallization on Cu/Sn bonding

Effects of Bismuth in Sn-Cu Based Solder Alloys and Interconnects

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