Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

Reifsnider, Jason M.; Oye, Michael M.; Govindaraju, Sridhar; Holmes, A. L.

doi:10.1016/j.jcrysgro.2005.03.003

Cited by 3 publications

(1 citation statement)

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“…[20][21][22][23][24] The baffled MBE effusion cell discussed in this article was placed in one of the four upwardlooking ports on the growth chamber's source flange. Additional details about our MBE system can be found elsewhere.…”

Section: ͑1͒mentioning

confidence: 99%

Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3

Oye

Hurst

Shahrjerdi

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Stable nonplanar surface formed on patterned GaAs (311)A substrate by molecular-beam epitaxyWe present an atomic force microscopy ͑AFM͒ study of sapphire surfaces that contain scratches with various severities. The objective was to observe the effects of substrate annealing at 850°C for 200 min with a H 2 O-based overpressure resulting from an Al͑OH͒ 3 powder that was thermally cracked at 1200°C. The Al͑OH͒ 3 was decomposed into Al 2 O 3 and H 2 O according to a partial Bayer process in a modified molecular-beam epitaxy ͑MBE͒ effusion cell, which was equipped with homemade baffles placed at its outlet. These homemade, simple-to-construct tantalum baffles allow for the selective outfluxing of gaseous species, from those that are solid based. A UTI™ 100C-model mass spectrometer was used to monitor the species present at the sapphire surface during annealing. Any aluminum-based solid species from the Al͑OH͒ 3 were not observed in the mass spectrum, although the H 2 O-based species were. The sapphire substrates were annealed in a Varian Gen II™ MBE system, with H 2 O beam equivalent pressures ͑BEPs͒ of 5 ϫ 10 −6 and 2 ϫ 10 −5 Torr, as well as with no H 2 O flux at all. The AFM images show that the samples annealed with a higher H 2 O BEP of 2 ϫ 10 −5 Torr had noticeably less severe surface scratches than the samples that were annealed with lower H 2 O BEPs.

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Section: ͑1͒mentioning

confidence: 99%