A high efficiency nitrogen rf plasma source has been used to grow GaNAs by diluting the N 2 gas with Ar. This source ͑an EPI UniBulb™ source͒ was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead to the growth of GaN instead of a random alloy. In this work we demonstrate that a dilute N 2 /Ar mixture leads to GaNAs films where the amount of nitrogen incorporation varies directly with the percentage of N 2 in the gas mixture. Films with high structural quality were grown, thus validating the use of this approach.

Articles you may be interested inInternal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

Articles you may be interested inEffects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxidesemiconductor with Ge O 2 surface passivation Appl. Phys. Lett. 93, 073504 (2008);

Articles you may be interested inInternal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

We describe a new GaN film growth method employing a supersonic jet of nitrogen atoms and a gallium effusion cell. The nitrogen atoms were generated by exciting a 1% nitrogen in helium mixture with a radio frequency discharge. X-ray diffraction and in situ reflection high-energy electron diffraction indicate that GaN films grown on sapphire ͑0001͒ were single crystalline and epitaxial with a rough surface morphology. A GaN growth rate of approximately 0.65 m/h was measured, independent of substrate temperature over the range of 600-750°C. However, the crystalline quality of the film increases markedly with increasing wafer temperature.