Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma

An initial investigation of the use of atomic nitrogen for controlled p-type doping of wide-bandgap Hg 0.3 Cd 0.7 Te (x = 0.7) is reported. Mixtures of argon and nitrogen, ranging in nitrogen concentration from 0.1% to 100%, have been utilized to demonstrate well-controlled nitrogen incorporation in the 10 16 cm -3 to 10 20 cm -3 range using total gas flow rates of 0.3 sccm to 4.0 sccm and radiofrequency (RF) powers of 100 W to 400 W. Nitrogen doping exhibits several desirable attributes including abrupt turn-on and turn-off and minimal sensitivity to variations in growth temperature and HgCdTe composition, with no negative effects on HgCdTe dislocation density and morphology. Preliminary electrical measurements indicate primarily n-type behavior in the 10 14 cm -3 to 10 15 cm -3 range in as-grown x = 0.7 HgCdTe and CdTe films doped with nitrogen at 10 18 cm -3 to 10 20 cm -3 concentrations, while ZnTe films have exhibited p-type electrical activity with hole concentrations approaching 10 20 cm -3 .

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“…Our present investigation indicates that Ar/N mixing 15 is also an effective method for control of nitrogen concentration in HgCdTe alloys.…”

Section: Introductionmentioning

confidence: 86%

An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas

Lyon

Rajavel

Hunter

et al. 2008

Journal of Elec Materi

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“…Additional details about our system can be found elsewhere [7,8,10,11]. Although common MBE configurations involve an ion pump and a cryo-pump attached to the growth chamber, our system has dual 2200 liter per second (l/s) CTI TM cryo-pumps and a high capacity 1000 l/s Varian TM turbo-molecular (turbo) pump to assist with the gas flows from the RF plasma source.…”

Section: Methodsmentioning

confidence: 99%

“…Unfortunately, plasma damage is a resultant artifact that is associated with the use of these nitrogen plasma sources [5,6]. In an attempt to reduce these plasma damage effects, we have developed a mixed gas source consisting of N 2 concentrations that range from 1% to 10% nitrogen in argon [7]. Using this mixed gas source, we observed higher nitrogen incorporation into the crystal lattice for increases in the RF power, the gas flow rate, or the nitrogen concentration in the gas.…”

Section: Introductionmentioning

confidence: 99%

Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

Reifsnider¹,

Oye²,

Govindaraju³

et al. 2005

Journal of Crystal Growth

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“…Nitrogen incorporation of 1% was obtained using active N cracked from a gas mixture comprised of 1% N in argon. 11 The plasma source was operated at a power of 300 W with a gas flow rate of 0.6 sccm. The quantum wells and the barriers were grown at 480°C while the remaining structure was grown at the GaAs deoxidation temperature of 580°C.…”

Section: Methodsmentioning

confidence: 99%

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Govindaraju

Reifsnider

Oye

et al. 2004

Journal of Elec Materi

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This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ϳ400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ϳ5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion.

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Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma

Cited by 22 publications

References 9 publications

An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas

An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas

Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

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