Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80nm) Si1−xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications

Abstract

Articles you may be interested inEffects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxidesemiconductor with Ge O 2 surface passivation Appl. Phys. Lett. 93, 073504 (2008);

Low surface roughness and threading dislocation density Ge growth on Si (001)

“…In addition, the small direct energy bandgap of 0.8 eV at room temperature in Ge makes it possible to design efficient photodetectors operating in the low-loss optical fiber range of 1.3-1.5 mm [2]. Furthermore, successful growth of Ge on Si provides a virtual substrate for the integration and fabrication of GaAs-based optical devices [4] and realization of III-V compound semiconductor metal-oxide-semiconductor-field-effect-transistor (MOSFET) on Si [5]. Ge acts as a buffer layer for the GaAs growth on Si substrates because Ge presents a nearly perfect lattice match to GaAs (0.07% at 300 K).…”

GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

“…For Ge on Si heteroepitaxy, a popular approach is the use of composition graded SiGe buffers [1,2]. Such buffers were readily employed for heteroepitaxy of GaAs on Si [1,3].…”

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

“…Furthermore, Ge has a lattice constant that is perfectly matched to gallium arsenide (GaAs) (0.07% at 300 K), which can be used as a buffer layer for integration of GaAs based devices on Si substrate. [1][2][3][4] One of the important parameters in determining the device worthiness of epitaxially deposited layers is the epilayers' threading dislocation density (TDD). Due to a large lattice mismatch between Ge and Si, a large number of misfit dislocations (MD) and TDD, on the order of 10 10 cm −2 , may be generated in the heterostructure when Ge is grown directly on Si substrate.…”