Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

Lee, Kwang Hong; Bao, Shuyu; Chong, Gang Yih; Tan, Yew Heng; Fitzgerald, Eugene A.; Tan, Chuan Seng

doi:10.1063/1.4905487

Cited by 50 publications

(36 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Actually, in conventional SOI fabrication, a high temperature annealing process is always conducted to cure the defects in Si layer [20]. Furthermore, high temperature annealing has also shown great effectiveness to reduce the dislocations in a GOI wafer fabricated by transferring a Ge epitaxial film grown on a Si substrate [21,22]. Thus, we have investigated the thermal annealing impact on the crystal quality of the Ge layer on the GOI substrate fabricated by Ge bulk wafer bonding and ioncutting.…”

Section: Effect Of Thermal Annealing On Ge-on-insulatormentioning

confidence: 99%

Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding

Kang

Takenaka

et al. 2016

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

Section: Effect Of Thermal Annealing On Ge-on-insulatormentioning

confidence: 99%

Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding

Kang

Takenaka

et al. 2016

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

“…The detailed fabrication process is discussed in Supplementary section S1. The bonding and layer transfer approach could facilitate a scalable Ge-OI fabrication to any wafer diameter and Ge thickness, with a superior Ge quality than that from the direct Ge-on-Si epitaxy 46 . Its low process thermal budget (~300 ºC) enables a back-end-of-line electronic-photonic integration.…”

Section: Recessed Sin X Stressor For Enhanced and Uniform Mechanical mentioning

confidence: 99%

Strain-enabled ultra-broadband Ge-based photonic devices for low-cost integration in PICs

Lin

Wen

et al. 2020

Preprint

Self Cite

View full text Add to dashboard Cite

Photonic-integrated circuits (PICs) have become one of the most promising solutions to the burgeoning global data communication and are being envisioned to have revolutionary impact in many other emerging fields. This outlook requires future PICs to be significantly more broadband and cost-effective. The current germanium (Ge)-based active photonic devices in PICs are thus facing a new bandwidth-cost trade-off. Here, we demonstrate ultra-broadband, high-efficiency Ge photodetectors up to 1,630 nm operation wavelength and Ge0.99Si0.01 electro-absorption (EA) modulator arrays with an operating range of ~100 nm from 1,525 to 1,620 nm, using a CMOS-compatible recess-type silicon nitride (SiNx) stressor. The broadband operation could facilitate a wide (>100 nm) window for low-cost Ge modulator-detector co-integration, requiring only a single step of Ge epitaxy and two different SiNx depositions. The broad modulation and co-integration coverage can be entirely shifted to shorter (~1,300 nm) and longer (>1,700 nm) wavelengths with small amounts of Si or tin (Sn) alloying. This proof-of-concept work provides a pathway for PICs towards future low-cost and high-data-capacity communication networks, immediately accessible by designers through foundries.

show abstract

“…To minimize the effect of the lattice mismatch, our group has successfully demonstrated the direct epitaxial growth of Ge-on-Si (Ge/Si) with a TDD of ∼5 × 10 6 cm −2 [9,10].…”

Section: Introductionmentioning

confidence: 99%

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

Wang

Sasangka

et al. 2018

Photon. Res.

Self Cite

View full text Add to dashboard Cite

High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized through Ge epitaxial growth, wafer bonding, and layer transfer processes on 200 mm wafers. With O 2 annealing, the TDD of the GOI substrate can be reduced to ∼1.2 × 10 6 cm −2 . LEDs fabricated on this GOI substrate exhibit record-high optical output power of 1.3 mW at a 670 nm peak wavelength under 280 mA current injection. This output power level is at least 2 times higher compared to other reports of similar devices on a silicon (Si) substrate without degrading the electrical performance. These results demonstrate great promise for the monolithic integration of visible-band optical sources with Si-based electronic circuitry and realization of high-density RGB (red, green, and blue) micro-LED arrays with control circuitry.

show abstract

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

Cited by 50 publications

References 23 publications

Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding

Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding

Strain-enabled ultra-broadband Ge-based photonic devices for low-cost integration in PICs

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

Contact Info

Product

Resources

About