Critical role of a double-layer configuration in solution-based unipolar resistive switching memories

Carlos, Emanuel; Kiazadeh, Asal; Deuermeier, Jonas; Branquinho, Rita; Martins, Rodrigo; Fortunato, Elvira

doi:10.1088/1361-6528/aac9fb

Cited by 23 publications

(20 citation statements)

References 45 publications

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“…XPS was measured with a Kratos Axis Supra, using monochromated Al Kα irradiation (1486.6 eV). The procedure was the same as mentioned in a previous report 45. The quantification of the elemental composition (C 1s, Al 2p, O 1s) was done by dividing the integral peak intensity by the respective relative sensitivity factor (RSF) of the instrument.…”

Section: Methodsmentioning

confidence: 99%

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Carlos

Leppäniemi

Sneck

et al. 2020

Adv Elect Materials

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Lately, printed oxide electronics have advanced in the performance and low‐temperature solution processability that are required for the dawn of low‐cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra‐thin high‐κ aluminum‐oxide dielectric with a high‐throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low‐temperature processing (≤200 °C). Thermal annealing is combined with low‐wavelength far‐ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high‐κ dielectric exhibits a very low leakage‐current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.

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Section: Methodsmentioning

confidence: 99%

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Carlos

Leppäniemi

Sneck

et al. 2020

Adv Elect Materials

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“…Reproduced with permission. [ 98 ] Copyright 2018, IOP Publishing Ltd. c) Representative I – V curves obtained from ZrO 2 RRAM devices, with different film thicknesses by changing the number of layers. Reproduced with permission.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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“…The RS performance of these memories could be enhanced since the conical electrode concentrated the electric field at the sharp tip to localize the forming site of the conductive filament to tens of nanometers. Rosa et al introduced indium–gallium–zinc oxide nanoparticle (IGZOnp)‐based memristive device using solution process . The solution‐based deposition provides more defective film with low cost compared to a film deposited by vacuum process, which can be promising for the fabrication of RS memory.…”

Section: Inorganic Resistive Switching Memoriesmentioning

confidence: 99%

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

Sung

Kim

et al. 2019

Adv Materials Technologies

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The latest progresses in software engineering such as cloud computing, big data analysis, and machine learning have accelerated the emergence of advanced intelligent systems (AIS). However, the current computing system has significant challenges in dealing with unstructured data (e.g., image, voice, physiological signals) because the von‐Neumann bottleneck induces latency and power consumption issues. Neuromorphic computing, which imitates the behaviors of neuron and synapse within the biological neural network, is considered a promising solution beyond von‐Neumann architecture, since its collocated structure of processor and memory enables parallel processing of unstructured data with remarkable efficiency. Memristors are considered as next‐generation nonvolatile memory devices due to fast speed, low power, and excellent scalability. However, a low reliability and leakage current issues remain as obstacle to the commercialization of memristors. Memristive devices have been widely investigated as a strong candidate for artificial synapses since their resistance modulation characteristics under electrical stimulus are analogous to the plasticity of the brain synapse. Although emulation of synaptic behavior by single memristor cells is demonstrated by many researchers, the development of fully functional memristive neural network requires further investigations. This paper introduces the recent advances and developments in the field of inorganic‐based unconventional memristive devices for future AIS applications.

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Critical role of a double-layer configuration in solution-based unipolar resistive switching memories

Cited by 23 publications

References 45 publications

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

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