2012
DOI: 10.1016/j.jcrysgro.2011.10.037
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Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth

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Cited by 12 publications
(7 citation statements)
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“…This reduced indium concentration indicates a mass transfer from the wetting layer into the quantum dots, resulting in a lower indium content at the positions 3, 5, and 7 ML, where the capping starts. Note that the nominal total deposition of 6 ML is close to the critical thickness of 6:4 6 0:8 ML, at which quantum dot formation starts for In 0:5 Ga 0:5 As =GaAs, 28 corroborating the above conclusions.…”
supporting
confidence: 80%
See 1 more Smart Citation
“…This reduced indium concentration indicates a mass transfer from the wetting layer into the quantum dots, resulting in a lower indium content at the positions 3, 5, and 7 ML, where the capping starts. Note that the nominal total deposition of 6 ML is close to the critical thickness of 6:4 6 0:8 ML, at which quantum dot formation starts for In 0:5 Ga 0:5 As =GaAs, 28 corroborating the above conclusions.…”
supporting
confidence: 80%
“…This is consistent with critical thickness for QD evolution for pure InAs deposition. 28 In the 18 ML case, we find 2:460:3 ML of pure InAs material within the WL. This indicates that the gradient of strain energy is reduced for low indium concentrations ( 15%) present in the WL of the 18 ML case, leading to the characteristic linear decrease of the indium concentration within the WL [Fig.…”
mentioning
confidence: 75%
“…To investigate the QD growth mode, we prepared a sample set with increasing In 0.5 Ga 0.5 Sb coverage, after deposition of a 5 ML-thick GaAs interlayer and 1s-Sb-flush. The Sb-irradiation prior to In 0.5 Ga 0.5 Sb deposition is likely to promote an exchange of Sb atoms for As atoms on the surface [15][16][17] which can help to increase the Sb content in QDs. Antimony as a large atom may also act as a surfactant, influencing growth generally in many ways, 18-21 modifying, for example, the diffusion length of surface atoms, but also the QD formation.…”
mentioning
confidence: 99%
“…The initial GaSb QD density, which is about 120 μm À 2 , decreases to less than 30 μm À 2 , while the average QD height increases about 1.5 times (from 9.5 nm for x¼0.0 to 14.5 nm for x¼ 0.07) when the In 0.07 Ga 0.93 As layer is inserted. These observations are attributed to the change of initial surface energy, interface energy as well as the strain energy of the QD system [11,12].…”
Section: Resultsmentioning
confidence: 97%