Croissance épitaxique des composés II–VI en phase vapeur

Blanconnier, P.; Hénoc, P.

doi:10.1016/0022-0248(72)90250-3

Cited by 20 publications

(3 citation statements)

References 9 publications

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“…To produce the source material, we have isothermally annealed non-stoichiometric CdTe pieces grown by vertical Bridgman in ampoules to which was affixed a capillary kept at room temperature [36,37]. In such experiments, the total pressure P T over the charge tends towards P min .…”

Section: Preparationmentioning

confidence: 99%

Solid state recrystallization: a promising technique for the growth of semiconductor materials

Triboulet

2003

Cryst. Res. Technol.

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Section: Preparationmentioning

confidence: 99%

Solid state recrystallization: a promising technique for the growth of semiconductor materials

Triboulet

2003

Cryst. Res. Technol.

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“…A method, in which a capillary connected to the ampoule is aimed at reaching the stoichiometry of the charge in order to adjust the total pressure to its minimum value corresponding to congruent sublimation, and then maximum growth rate, has been reported [26, 62,63]. A method, in which a capillary connected to the ampoule is aimed at reaching the stoichiometry of the charge in order to adjust the total pressure to its minimum value corresponding to congruent sublimation, and then maximum growth rate, has been reported [26, 62,63].…”

Section: Znsementioning

confidence: 99%

Growth of Zinc Chalcogenides

Triboulet

2003

Crystal Growth Technology

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“…Piper et Polich [l]. Cette mBthode[2] basBe sur les ph6nomi.nes classiques de sublimation et de condensation, ne met en jeu aucun agent de transport et Bvite les differentes sources exterieures de contamination. Notons cependant que la poudre de depart doit 6tre au prealable dess6chBe sous flux d'hydrogkne, B 700 "C, afin d'gliminer au maximum les traces d'humidit6.…”

unclassified

Sur la photoluminescence du séléniure de zinc

Etienne

Allègre

Chevrier

et al. 1975

Phys. Stat. Sol. (a)

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Les spectres de photoluminescence du ZnSe prksentent A 4,2 O K de nombrenses raies intenses, prkcedant deux bandes d'6mission A plus basse 6nergie. Nous avons mis en itvidence des emissions dues A des complexes excitoniques lies, A des electrons 011 trous pi6g6s sur des centres peu profonds e t A des centres profonds. Nous avons egalement etudi6 l'influence des traitements haute temperature avec ou sans ses composants sous forme vapeur. Du fait des modifications rapides et en l'absence d'atomes Atrangers en concentration suffisante tous les effets ont btk attribues B la formation e t (ou) A l'annihilation de defauts natifs dans le reseau. I1 est hien connu que les dhfauts natifs jonent un rBle important, sinon primordial dans les proprietes de ces compos6s. Trois types de complexes excitoniques lies ayant des energies de 27,5; 52 et 212 meV ont 6t6 mis en evidence et nous les avons attribues A des excitons lies A des donneurs ou des accepteurs.A large number of sharp lines have been observed in photoluminescent spectra of ZnSe at 4.2 OK, leading t o two bands a t lower energy. Emission due to bound exciton complexes, electrons or holes trapped in shallow centers and deep centers has been observed. The effect of heat treating ZnSe in either the presence or absence of its component vapors is investigated too. Because of the rapid changes and absence of foreign atoms in sufficient concentrations, all of the effects have been attributed to the formation and/or annihilation of native defects and their incorporation within or removal from the crystal lattice. It is obvious that native defects play an important, if not dominant, role in the properties of that compound. Three types of bound exciton complexes having energies of 27.5,52, and 212 meV are found and assigned tentatively as due t o excitons bound t o donors or acceptors.

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Croissance épitaxique des composés II–VI en phase vapeur

Cited by 20 publications

References 9 publications

Solid state recrystallization: a promising technique for the growth of semiconductor materials

Solid state recrystallization: a promising technique for the growth of semiconductor materials

Growth of Zinc Chalcogenides

Sur la photoluminescence du séléniure de zinc

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