Cross coupled beams CMOS–MEMS resonator for VHF range with enhanced electrostatic detection

Marigo, E.; Munoz-Gamarra, J. L.; Vidal, G.; Giner, J.; Torres, F.; Uranga, A.; Barniol, N.

doi:10.1016/j.mee.2011.02.100

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…The use of commercial CMOS process to fabricate MEMS devices is called CMOS-MEMS technology [11][12][13][14]. Micro sensors and actuators manufactured by this technology usually require a post-CMOS process to add functional materials [15][16][17] or to release suspended structures [18][19][20]. In this work, we develop a micromachined RF switch using the CMOS-MEMS technology.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

2015

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Abstract:The study investigates the design and fabrication of a micromachined radio frequency (RF) capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS) technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW) lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM) software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

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Section: Introductionmentioning

confidence: 99%

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

2015

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“…Nevertheless, the fundamental challenge of monolithic integration is the compatibility of MEMS and CMOS processes. Currently, many different approaches are taken to construct monolithic integration [1][2][3][4]. Mechanical strain induced by the silicon nitride capping layer has been shown to influence the performance of short-channel MOSFETs, such as gate leakage current and interface trap density, which may compromise reliability [5,6].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor

Zhao

Zhang

Liu

et al. 2013

KEM

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In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.

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