Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO<sub>2</sub> detection at room temperature

Song, Young Geun; Baek, In‐hwan; Yim, Jae-Gyun; Eom, Taeyong; Chung, Taek‐Mo; Lee, Chul‐Ho; Hwang, Cheol Seong; Kang, Chong Yun; Kim, Seong Keun

doi:10.1039/d1ta11014d

Cited by 18 publications

(6 citation statements)

References 51 publications

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“…18,27 Figure 2a,b shows the SEM images of the films grown on SiO 2 and Al 2 O 3 , respectively, using SnS ALD at 240 °C for 300 cycles. Consistent with previous results, 18,27 SnS plates with a diameter of 100−200 nm were not continuously formed on SiO 2 , and no film was formed on Al 2 O 3 ; this verified the area selectivity of SnS ALD on SiO 2 and Al 2 O 3 surfaces. We tried the transformation of ALD-grown SnS into SnS 2 via H 2 S plasma post-treatment.…”

Section: Resultsmentioning

confidence: 99%

“…Before investigating area-selective deposition with the ISαP 1 methods, SnS 2 films were grown without inhibitors based on the inherent selectivity of SnS ALD. , Figure a,b shows the SEM images of the films grown on SiO 2 and Al 2 O 3 , respectively, using SnS ALD at 240 °C for 300 cycles. Consistent with previous results, , SnS plates with a diameter of 100–200 nm were not continuously formed on SiO 2 , and no film was formed on Al 2 O 3 ; this verified the area selectivity of SnS ALD on SiO 2 and Al 2 O 3 surfaces.…”

Section: Resultsmentioning

confidence: 99%

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Area-Selective Atomic Layer Deposition of SnS₂ Nanosheets for Applications of Back-End-of-Line-Compatible Transistors

Yim

Chung

Ryu

et al. 2023

ACS Appl. Nano Mater.

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As semiconductor devices are miniaturized (to dimensions of nanometers), the accurate alignment of each layer on the desired location poses a challenge in the fabrication of multilayer-stacked devices. Area-selective deposition has attracted interest in resolving alignment issues in nanoelectronics. Herein, we demonstrate the area-selective atomic layer deposition (ALD) of SnS2, a promising two-dimensional channel material for the application of back-end-of-line (BEOL)-compatible transistors, on SiO2 (growth area) and Al2O3 (nongrowth area). We employed a super cycle comprising acetylacetone injection as an inhibitor, SnS ALD cycles, and H2S plasma for the area-selective deposition of SnS2. Although SnS ALD possesses good selectivity, the H2S plasma used for the transformation of SnS to SnS2 deteriorated the Al2O3 surface and resulted in nucleation in the nongrowth area. The acetylacetone injection in the super cycle was selectively adsorbed by Al2O3 and protected it from the H2S plasma. The synergistic effects of the selectivity of the SnS ALD process and protection of the Al2O3 surface exhibited excellent selectivity for SnS2. In the super cycle, the increase in the number of SnS cycles enhanced growth incubation on Al2O3 and induced the appearance of the SnS phase on SiO2 as the growth area. By optimizing the super-cycle conditions, ∼7 nm of selective SnS2 deposition was achieved on Al2O3 and SiO2. The proposed strategy will help enhance the area-selective deposition technology for two-dimensional semiconductors in BEOL-compatible transistors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Area-Selective Atomic Layer Deposition of SnS₂ Nanosheets for Applications of Back-End-of-Line-Compatible Transistors

Yim

Chung

Ryu

et al. 2023

ACS Appl. Nano Mater.

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“…Due to the distinctive energy band structure, semiconductor features, changeable structure, and superior mechanical qualities of two-dimensional metal sulfide (TMDs), − it has shown application prospects in the sectors of sensing, thermoelectric materials, and photoelectric detection . The internal energy band features of the p -type SnS semiconductor are tunable (1.00 to 1.30 eV).…”

Section: Introductionmentioning

confidence: 99%

Sea Urchin-like SnS/Nitrogen-Doped Carbon Nanotube Dielectric Composites for Tunable Electromagnetic Response

Xiong,

Kou,

Zuo

et al. 2023

ACS Appl. Nano Mater.

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Owing to the unique energy band structure, semiconductor property, and adjustable morphology of two-dimensional SnS nanomaterials, it is extremely practical to employ them as dielectric microwave absorbers. However, electrical conductivity restricts the dielectric characteristic of SnS, resulting in a higher filling rate in real-world applications. Herein, sea urchin-like SnS/N-doped carbon nanotube (N-CNT) heterogeneous frameworks are fabricated by using the self-assembly solvothermal method to further upgrade the performance of SnS-based microwave absorbers. The flower-like SnS nanosheets are chained by way of one-dimensional conductive N-CNTs to shape three-dimensional (3D) hierarchical composites. In particular, the frameworks with a cross-linking nanoarchitecture provide an effective path to boost the conductive loss. Meanwhile, SnS nanosheets in the form of flowers with unique semiconductor properties offer a lot of polarization active sites, which encourage polarization loss. Furthermore, by optimizing the ratio of SnS and N-CNTs, the dielectric characteristics and impedance matching of the composites may be efficiently adjusted. The results certify that optimized SnS/N-CNT heterogeneous nanoframeworks exhibit thin thickness, lightweight, and strong absorption characteristics, which are recommended as promising microwave absorbers.

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“…Tin sulfide (SnS) is a chalcogenide semiconductor binary compound consisting of group IV–VI earth-abundant nonpoisonous elemental materials Tin (Sn) and sulfur (S). P-type semiconductors include SnS 3 and have a band gap 4 of 1 to 1.57 eV, 5 sometimes close to that of Si. 6 Because of this optimum gap, the SnS absorber layer is used not only as an alternative for photovoltaic applications but also for gas sensing applications.…”

Section: Introductionmentioning

confidence: 99%

Effect of copper doping on plasmonic nanofilms for high performance photovoltaic energy applications

Tariq,

Asghar,

Shifa

et al. 2023

Phys. Chem. Chem. Phys.

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Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO₂ detection at room temperature

Abstract: Morphological engineering of two-dimensional chalcogenides has led to significant advances in terms of high responses and low power consumption for chemiresistive gas sensors. Nevertheless, the practical use of such nanostructured...

Cited by 18 publications

References 51 publications

Area-Selective Atomic Layer Deposition of SnS₂ Nanosheets for Applications of Back-End-of-Line-Compatible Transistors

Area-Selective Atomic Layer Deposition of SnS₂ Nanosheets for Applications of Back-End-of-Line-Compatible Transistors

Sea Urchin-like SnS/Nitrogen-Doped Carbon Nanotube Dielectric Composites for Tunable Electromagnetic Response

Effect of copper doping on plasmonic nanofilms for high performance photovoltaic energy applications

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Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO2 detection at room temperature

Abstract: Morphological engineering of two-dimensional chalcogenides has led to significant advances in terms of high responses and low power consumption for chemiresistive gas sensors. Nevertheless, the practical use of such nanostructured...

Cited by 18 publications

References 51 publications

Area-Selective Atomic Layer Deposition of SnS2 Nanosheets for Applications of Back-End-of-Line-Compatible Transistors

Area-Selective Atomic Layer Deposition of SnS2 Nanosheets for Applications of Back-End-of-Line-Compatible Transistors

Sea Urchin-like SnS/Nitrogen-Doped Carbon Nanotube Dielectric Composites for Tunable Electromagnetic Response

Effect of copper doping on plasmonic nanofilms for high performance photovoltaic energy applications

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Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO₂ detection at room temperature

Area-Selective Atomic Layer Deposition of SnS₂ Nanosheets for Applications of Back-End-of-Line-Compatible Transistors

Area-Selective Atomic Layer Deposition of SnS₂ Nanosheets for Applications of Back-End-of-Line-Compatible Transistors