Cross point arrays of 8 nm × 8 nm memristive devices fabricated with nanoimprint lithography

Abstract

Building arrays of memristive devices with sub-10 nm lateral dimensions is critical for high packing density, low power consumption, and better uniformity in device performance. Here, the authors demonstrate arrays of 8 Â 8 nm 2 cross point memristive devices using wet chemical etching and nanoimprint lithography. The devices exhibited nonvolatile bipolar switching with extreme low programming current of 600 pA. The devices also exhibited fast switching speed and improved uniformity and promising endurance and data retention. This work opens the opportunities for memristive devices in the next generation ultrahigh-density data storage and low-power high-speed unconventional computing. V

Practical Determination of Individual Element Resistive States in Selectorless RRAM Arrays

“…RRAM systems exhibit small size and good scalability (down to 8 × 8 nm node size reported in the literature) [1], [2], multi-state memory storage [3], low-power operation [4] and rely on the use of simple, 2-terminal devices; all highly desirable characteristics for applications ranging from large, industrial memory cells to neuromorphic applications. In neuromorphic engineering RRAM is seen as a possible means of linking pre-and post-synaptic neurons through areaeffective artificial synapses [5]; currently a fundamental stumbling block towards the development of large-scale, area-and power-efficient artificial brain-inspired computational systems.…”

Nanoscale memristive radiofrequency switches

“…17), fast switching speed (ons; ref. 18), high endurance (10 12 cycles) 19 , excellent scalability [20][21][22] and CMOS compatibility 25 . As such, memristive devices are promising candidates for universal memory 23,24 , reconfigurable bits 25 , nonvolatile logic 26 and unconventional computing 27 .…”

Memristor Device Engineering and CMOS Integration for Reconfigurable Logic Applications

“…To couple ultra-short electrical pulses into the device with reduced reflection, a tapered coplanar waveguide (CPW) test structure was introduced and the best reported switch speed data was on the order of 100 ps [7]. It was also discovered that there is a speed-voltage trade-off for the memristor devices [21]. Higher switching voltage is usually needed to switch the devices if shorter electrical pulses are used.…”