Memristor Device Engineering and CMOS Integration for Reconfigurable Logic Applications

Xia, Qiangfei

doi:10.1007/978-1-4614-9068-5_11

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Cited by 3 publications

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“…Since the memristor remembers its previous state when the excitation is off, it is non-volatile and strongly related to resistive switching memories, which are considered to be the next generation of electronic memories. As such, memristors could be used in reconfigurable logic circuits [2] or in neuromorphic systems [3] in order to mimic the synapses, which are the fundamental key components of neural systems.…”

Section: Introductionmentioning

confidence: 99%

Memristive GaN ultrathin suspended membrane array

et al. 2016

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We show that ultrathin GaN membranes, with a thickness of 15 nm and planar dimensions of 12 184 m 2 , act as memristive devices. The memristive behavior is due to the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of seconds and varies with the current or voltage sweep.

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Section: Introductionmentioning

confidence: 99%