Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots

Abstract

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Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

“…This partial WL formation, i.e., the first 1–2 BLs in both layers A1 and A2, is comparable to the formation of indium-rich clusters during the growth of submonolayer QDs where the QDs are formed by stacking ML high islands. 55 , 56 In the DE growth, the leftover indium on the growth surface from the droplet deposition reacts with the fresh As arriving on the surface forming such InAs-rich regions. In addition, the As–P surface exchange assists in the formation of a discontinuous layer of InAs(P).…”

Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

“…The sample was cleaved under ultra-high vacuum and measured by STM at 77K on a freshly obtained 110 surface. More information about this sample and previous X-STM measurements can be found in [22].…”

Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

“…As the In segregation is proportional to the growth temperature and Se flux, [68,69] we modified the growth process for heterostructures, using substrate temperature of 380°C during the growth of the InSe/GaSe interfaces. At lower temperatures the Se stick coefficient also change and the flux needs to be adjusted according in order to obtain the same phases.…”