Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

Characterization of BF<inf>2</inf>, Ga and in dopants in Si for halo implantation

“…Indium (In) has been used for halo implantation for suppression of short channel effect [1]. Recently, the advantage of cryogenic ion implantation with medium current implanters has been reported [2]. They showed that the cryogenic BF 2 implant improved the short channel rolloff characteristics.…”