Cryogenic performance of a 200 GHz SiGe HBT technology

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

“…Moreover, Cressler and co-workers [8,[21][22][23]30,31] presented the direct current (DC) measurements of the IBM 1st to 4th generation SiGe HBTs operating in cryogenic temperature regime. Especially, a highly scaled 90 nm SiGe HBT operating at temperature as low as 70 mK has been demonstrated [23].…”