Cryogenic performance of double-fused 1.5-μm vertical cavity lasers

Zhang, Y.M.; Piprek, Joachim; Margalit, N.M.; Anzlowar, M.; Bowers, John E.

doi:10.1109/50.749392

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…is slightly negative at room temperature [188]. declining from thermal redistribution of carriers [191,195,196]. Similarly, also increases due to the slow change of the effective cavity index with temperature [98].…”

Section: Optoelectronic Characteristicsmentioning

confidence: 96%

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Mishkat-Ul-Masabih

Aragon

Monavarian

et al. 2020

Gallium Nitride Materials and Devices XV

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I am grateful to many people for making this work possible. First and foremost, I would like to thank my advisor Prof. Daniel Feezell for his dedicated guidance and support. Early on in my degree, I remember him mentioning that VCSEL projects are always of high risk and high reward. For the longest time, I doubted myself on whether I would be able to fulfill all the project requirements. But, Prof. Feezell believed in my ability and urged me to push forward which ultimately lead to groundbreaking results from my VCSEL project. Not only did I learn a ton from his vast knowledge on IIInitride materials and devices, his constructive criticisms greatly improved the quality of my work and allowed me to grow as a researcher. Next, I am thankful to my committee members and collaborators, Prof. Ganesh Balakrishnan, Prof. Sang Han, and Dr. Ting Luk for their time and suggestions. Their valuable insight on optical, electrical, and mechanical properties of semiconductors helped me tremendously in understanding the material characteristics and device performance of my VCSELs. I cannot express the immense gratitude I feel for my fellow group members, both past and present. All of whom have helped me towards the completion of my PhD in some way or another. Many thanks to Ashwin, Morteza, Mohsen, and Mike for introducing me to MOCVD and for taking care of my growths when I was busy doing something else. Discussions regarding fabrication with Andrew, Mahmoud, Rhett, Kenny, Farnood, and Abdel have always helped me in developing processes very v quickly and reliably. I am also grateful to Serdal, Arman, and Isaac for assisting me in various material and device related characterizations. Many of the accomplishments mentioned in this thesis could not have been possible without the support of the technical and/or administrative staff. As such, I am forever indebted to the ECE, CHTM, and CINT staff members for putting up with my numerous requests and questions throughout the years. Beyond the appreciation of the technical side of things, I would like to thank all my friends from back home and the ones I made during the course of my study. They were always there to lend a helping hand or to simply distract me from work whenever graduate student life became too overwhelming. Furthermore, I must also acknowledge the Bangladeshi community here at UNM for making Albuquerque feel like home, even though my real home is halfway around the world. Looking back, I will forever cherish these memories. Last, but certainly not least, I would like to thank my parents, my older sister, and my younger brother. I would not be where I am at today without their unconditional love and encouragement. They have sacrificed a lot so that I can pursue a career of my choice, even if it meant me being away from home for an extended period time. I only hope that the work I performed in this thesis is substantial enough to repay them and make them proud. vi

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Section: Optoelectronic Characteristicsmentioning

confidence: 96%

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Mishkat-Ul-Masabih

Aragon

Monavarian

et al. 2020

Gallium Nitride Materials and Devices XV

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“…Few papers on comprehensive numerical VCL simulations are published so far [14,15,16], however, these papers do not analyze electrical and thermal effect of oxide confinement. In order to study those effects, a comprehensive two-dimensional VCL model is used here which has produced excellent agreement with a variety of measurements [15,17,18]. Carrier transport is simulated using a finite-element drift-diffusion model.…”

Section: Model and Parametersmentioning

confidence: 99%

Electro-Thermal Analysis of Oxide-Confined Vertical-Cavity Lasers

Piprek

2001

phys. stat. sol. (a)

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The performance of oxide‐confined vertical‐cavity lasers (VCLs) can be severely limited by current leakage and self‐heating. This paper investigates electrical and thermal effects of lateral oxidation on wafer‐bonded 1.55 μm VCLs. Measurements are combined with two‐dimensional finite‐element simulations to analyze internal device physics. Charged defects at the p‐side fused interface are found to increase the threshold voltage as well as lateral current spreading. An optimum oxide aperture for minimum device heating is calculated. Loss reductions are predicted to lead to a minimization of self‐heating with small apertures.

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Bibliography

2003

Semiconductor Optoelectronic Devices

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Cryogenic performance of double-fused 1.5-μm vertical cavity lasers

Cited by 4 publications

References 8 publications

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Electro-Thermal Analysis of Oxide-Confined Vertical-Cavity Lasers

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