Cryogenic Quasi-Ballistic Transport Enhanced by Strained Silicon Technologies in 14-nm Complementary Fin Field Effect Transistors Through Virtual Source Model

Hsieh, E. R.; Wang, Zih Ying; Huang, Yi; Hung, Ting Chieh; Lyu, Ruei Yang; Lee, Kuan Yi

doi:10.1109/ted.2022.3175675

Cited by 3 publications

(1 citation statement)

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“…In the case of long-and midchannel, the DIBL was lower at 77 K compared to 300 K because the effective channel length increased due to the influence of surface potential at cryogenic temperatures [22]. Additionally, the carrier became difficult to overcome the channel energy barrier between the source and drain due to the reduced thermionic emission at cryogenic temperatures [23].…”

Section: Drain-induced Barrier Loweringmentioning

confidence: 99%

Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications

You,

Nam,

et al. 2024

IEEE Access

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This study investigated a novel forward body bias (FBB) analysis to optimize the threshold voltage (Vth) at cryogenic temperatures in the latest dynamic random-access memory (DRAM). Electrical measurements were conducted to analyze the cryogenic body bias effect in terms of performance, reliability, and short-channel effect in two types of transistors: DRAM peripheral low Vth transistors (Peri LVT) and buried-channel-array transistors (BCAT). At 77 K, the Vth shift (ΔVth) in BCAT was larger than that in Peri LVT due to the difference in channel doping concentration. It was observed that only BCAT experienced a decrease in saturation drain current (Id.sat) at cryogenic temperature because of the large ΔVth. To compensate for the ΔVth, FBB was applied to transistors. As a result, FBB effectively controlled the Vth and improved carrier mobility. Furthermore, this study demonstrated that FBB reduced hot-carrier degradation (HCD) at cryogenic temperature and improved short-channel effect, such as drain-induced barrier lowering (DIBL). These findings offer valuable solutions for optimizing cryogenic memory operation in quantum computing applications.INDEX TERMS Buried-channel-array transistor (BCAT), cryogenic, drain-induced barrier lowering (DIBL), forward body bias, hot-carrier degradation, threshold voltage.

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Section: Drain-induced Barrier Loweringmentioning

confidence: 99%