Crystal Growth and Properties of the Compounds CuGa3Se5 and CuIn3Se5

Debye Temperature of AIBIIICVI2 Chalcopyrites and CuBIII3CVI5 and CuBIII5CVI8 Ordered Defect Compounds

“…2 Fig. These values of q D for CuIn 3 Se 5 and CuGa 3 Se 5 at 235 and 292 K, respectively, are in good agreement with those at 211 and 260 K calculated recently by Orlova et al [55] for these compounds from melting points and thermal expansion coefficient data. Debye temperature q D for CuB III 3 C VI 5 and CuB III 5 C VI 8 ordered defect compounds ( * ) roughly estimated from optical data and q D0 for A I B III C VI 2 chalcopyrite compounds ( * ) as a function of (B 0sc V 1/3 /M) 1/2 s --1/6 .…”

Enhanced photoelectrochemical properties of CuGa3Se5thin films for water splitting by the hydrogen mediated co-evaporation method

“…In ordered defect compounds (ODCs) of Cu chalcopyrite materials such as CuIn 3 Se 5 and CuGa 3 Se 5 , distinguishing the Miller indices of these peaks is difficult. 44 Interestingly, only the FWHM of the (112) diffraction peaks varied considerably between samples prepared under different hydrogen partial pressures. This implies that the hydrogen atmosphere causes an elongation of the migration length of atoms, enhancing crystal growth along a specific direction reflecting the feature of the material, i.e.…”

Preparation of Bulk Polycrystalline MnGe_xSb_y (x = 0.5-1.0; y = 1.5-2.2) Doped with Co or Fe

“…Such characteristics include thermodynamic stability, lattice-matching with common semiconductors, favorable Mn-doping, ferromagnetism and half-metallicity. From the technological point of view, many techniques are suitable for preparing bulk chalcopyrite samples, among them we mention the Travel Heater Method (THM), Bridgman [4], direct crystallization during the melting process [5,6] and the solid state reaction [7]. Still, it is obvious from literature that the I-III-VI 2 undoped chalcopyrites family was more largely studied then the II-IV-V 2 family.…”