Crystal growth, electrical and photophysical properties of Tl2S layered single crystals

Badr, A. M.; Elshaikh, H. A.; Ashraf, I.M.

doi:10.1007/s12043-009-0078-8

Cited by 7 publications

(5 citation statements)

References 18 publications

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“…Above room temperature the current increases with the voltage and above 10 V current gets saturated. The photo sensitivity was determined for AgInSe 2 single crystal using the relation [15,16] …”

Section: Conductivity Measurementsmentioning

confidence: 99%

Synthesis, growth and characterization of AgInSe2 single crystals

Karunagaran¹,

Ramasamy²

2015

Materials Science in Semiconductor Processing

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Section: Conductivity Measurementsmentioning

confidence: 99%

Synthesis, growth and characterization of AgInSe2 single crystals

Karunagaran¹,

Ramasamy²

2015

Materials Science in Semiconductor Processing

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“…Thallium (III) presents, unlike the other elements in the group, a negative standard oxidation potential (compared with Ga (aq) or In (aq) ) and are generally used as oxidizing agents in organic chemistry, which suggests that the most prevalent oxidation state for thallium is the monovalent Tl(I) ions in aqueous solutions at neutral pH. [126,206] Thallium chalcogenides are used mostly as wide-gap semiconducting materials [207] and as X-rays dosimeters, [207] detectors for infrared radiation, photoconductors, [110,111,208,209] and thermoelectrics. [139,140] In some cases, it can be theorized as a superconductor.…”

Section: Thallium Chalcogenidesmentioning

confidence: 99%

“…In some cases, their study has been delayed despite the large technological advancements through the decades in synthetic, storage, and processing systems (inert atmosphere environment and (Schlenk) glassware, glove boxes, for example). [52,[101][102][103][104][105][106][107][108][109][110][111] Of these unusual compounds, boron presents a 1:1 stoichiometry only in BS, but a myriad of other compositions have been found for the B-S system. Only one polymeric structure has been found between boron and selenium and no B-Te compounds have yet to be reported.…”

Section: Introductionmentioning

confidence: 99%

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Guzzetta

Jellett

Azadmanjiri

et al. 2023

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been permitted. [4][5][6][7] Although, the employment of 2D nanosheets, especially in biomedicine, is still in its primordial state and has permitted to the realization of novel advancements in such applications. [8][9][10] It needs to be highlighted that some of these compounds present mild cytotoxicity and dose-dependent induced metabolic disadvantages. [11,12] Albeit direct use in the body is not yet advisable, it is possible to indirectly employ these compounds in the creation of wearable devices for tracking vital parameters. [13] Research on such topics, both from fundamental and applied studies has led to an exponential increase in the number of publications during the last 10 years (Figure 1c). [14] One of the pivotal characteristics of 2D nanostructures is their high specific area-to-thickness ratio, which can be easily modulated through delamination processes. [15] Ultimately, the smallest crystals that can be created are mono-or bi-atomic layers. To understand how the nanocrystals form from bulk, it is important to comprehend the main characteristic features of the macrocrystals. A layered crystal lattice is presented in Figure 2. These crystals are governed by strong, covalent (or ionic) in-plane bonds, which are often arranged into hexagonal honeycombs. These individual sheets are linked together by inter-plane (inter-layer), and weak van der Waals (vdW) forces. The bond energies between the in-plane atoms, are the major contribution on the total energy of the lattice, leaving weak inter-plane interactions with relatively large distances (i.e., about few hundred picometers in graphene). These large inter-planar spaces are suitable attack points for size reduction, [16][17][18] which requires an external energy input from a providing source in order to delaminate single-layer crystals.The in-plane honeycomb structure is responsible for electrical transport and associated phenomena. For instance, the great mobility of p-electrons and their delocalization on the surface allows excellent transport in graphene. [23,24] However, in some other electro-and photoactivated semiconductors based on 2D materials, the electrical transport on the surface is responsible for the hole-electron confinement. [25] It can also produce poor electrical conduction by 2D materials such as hexagonal boron nitride (hBN) and so making them electrical insulators (see Figure 1a). [26] These differences in the layersThe attention on group III-VI compounds in the last decades has been centered on the optoelectronic properties of indium and gallium chalcogenides. These outstanding properties are leading to novel advancements in terms of fundamental and applied science. One of the advantages of these compounds is to present laminated structures, which can be exfoliated down to monolayers. Despite the large knowledge gathered toward indium and gallium chalcogenides, the family of the group III-VI compounds embraces several other noncommon compounds formed by the other group III elements. These compounds present various crystal lattices...

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“…Tl 2 S is a semiconductor, possessing remarkable mechanical and optical properties [28][29][30]. The bulk Tl 2 S has been synthesized in experiments [31,32] and monolayer Tl 2 S can be obtained by exfoliation. Due to the special structure of Tl 2 S, it would be interesting to study the heterostructure of germanene and Tl 2 S (briefed as Ge/Tl 2 S in the following).…”

Section: Introductionmentioning

confidence: 99%

Enhanced valleytronic properties in germanene by direct proximity to heavy metal layer

Qu¹,

Luo²,

Peng³

et al. 2020

J. Phys.: Condens. Matter

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Germanene, though with Dirac valleys, is not deemed as a good valleytronic material due to its minute band gap, negligible spin–orbit coupling and spatial inversion symmetry. In comparison of interfacing germanene with MoS2, we proposed that forming heterostructure with Tl2S, an anti-MoS2 material with two outer heavy metal layers, could be more effective in raising spin–orbit coupling and band gap in germanene due to the direct Ge-metal contact. By carrying out first-principles calculations, we studied the valleytronic properties of germanene enhanced by monolayer Tl2S. It is found that the Ge–Tl direct interaction is strong to a proper extent so that the valleys of germanene still persist and simultaneously the valley gap is drastically increased from 23 to 370 meV. The valley spin splitting, being zero in pristine germanene, become 45 meV, which is opposite at inequivalent valleys owing to the time reversal symmetry. The inversion symmetry of germanene is broken by Tl2S, resulting in large Berry curvature near the valleys and hence laying the ground for Berry phase physics in germanene, e.g., valley spin Hall effect and valley–spin locking, as revealed in our study. The calculations found a perfect valley-selective circular dichroism, by which the valley and spin degrees of freedom can be manipulated selectively and correlatively.

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Crystal growth, electrical and photophysical properties of Tl2S layered single crystals

Cited by 7 publications

References 18 publications

Synthesis, growth and characterization of AgInSe2 single crystals

Synthesis, growth and characterization of AgInSe2 single crystals

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Enhanced valleytronic properties in germanene by direct proximity to heavy metal layer

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