“…On the other hand, our results agree well with those reported by Ren et al (2016). A possible reason for this difference is that in the studies by Karaki et al (2004) and Shi et al (2006) the crystals were grown using a stoichiometric compound, while for the crystals used by Ren et al (2016), as well as in the present work, an excess of Ga 2 O 3 was added to the crystal growth raw material. Maps of the diffraction intensity distribution for the CNGS crystal in the case of Laue diffraction geometry, reflection 201, rotation clockwise relative to the x 1 axis, at different applied voltages on the faces of the single-crystal plate:…”