Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Matsuo, Naoto; Abe, Hisashi; Kawamoto, Naoya; Taguchi, Ryouhei; Nouda, Tomoyuki; Hamada, Hiroki; Miyoshi, Tadaki

doi:10.3131/jvsj.43.1120

Cited by 6 publications

(6 citation statements)

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“…The reason for this may be that a-or poly-Siˆlm is melted by ELA at 550 mJ/cm 2 and crystallization from the supercooled liquid occurs. We observed the crystal growth from supercooled liquid at 400 mJ/cm 2 for a 100-nm-thickˆlm; 14) therefore, the same phenomenon is considered to be observed at 550 mJ/cm 2 in the present experiment. Here, the grain boundary may be melted by laser irradiation above 150 mJ/cm 2 , where a-Siˆlm becomes poly-Siˆlm.…”

Section: Methodssupporting

confidence: 52%

Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

et al. 2007

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Fig. 1 Relationship between tensile stress of poly-Siˆlm and energy density.Journal of the Vacuum Society of Japan Vol. 50, No. 8 (2007) The crystallinity of polycrystalline Si (poly-Si)ˆlm produced by the combined method of solid phase crystallization (SPC) followed by excimer laser annealing (ELA) or ELA followed by SPC is examined by observing the internal stress and the crystal defect. Tensile stress relaxation occurred when SPC was performed before or after ELA. The defect densities of poly-Sî lms recrystallized by ELA, ELA followed by SPC, and SPC followed by ELA decrease in this order.

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Section: Methodssupporting

confidence: 52%

Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

et al. 2007

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“…[1][2][3][4][5][6] We have studied the crystal growth mechanism of the poly-Si film prepared by multipulse ELA at a low energy density to achieve poly-Si grain enlargement. [7][8][9][10][11][12][13][14] The results of electron spin resonance (ESR) measurement for an ELA poly-Si film indicated that the density of defects at grain boundary, such as dangling bonds, is much larger than that of in-grain defects. 7) The hydrogen in an amorphous silicon (a-Si) film strongly affects the spin density even after the recrystallization of the poly-Si film by ELA.…”

Section: Introductionmentioning

confidence: 99%

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Kawamoto

Masuda

Matsuo

et al. 2006

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The role of hydrogen introduced into melt-Si during excimer laser annealing (ELA) is examined from the viewpoint of grain enlargement. An amorphous silicon (a-Si)/SiN/quartz glass structure is successfully prepared by a catalytic chemical vapor deposition (Cat-CVD) method for a SiN film, in which the hydrogen concentration of the SiN film is controlled. The grain size increases as the hydrogen concentration decreases, and it partially exceeds 2 mm when the hydrogen concentration of the SiN film is fixed at 2.3 at. %. The relationship between defects at grain boundary and hydrogen is also considered.

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“…The increase rate of temperature, the maximum temperature and the vacuum pressure were 60 C/ min, 600 C and 7 Â 10 À7 Pa, respectively. 19,23,29) and textured grains are observed on the quartz substrate. The secondary grain growth is observed on the SiO 2 /glass substrate.…”

Section: Ela and Analysis Of The Filmmentioning

confidence: 98%

“…16,17) On the basis of these results, a new crystal growth model was presented. [18][19][20][21] The purpose of this paper is to review the characteristics of the poly-Si film recrystallized by the ELA method. [22][23][24][25][26] First, the influence of the secondary grain growth on the stress relaxation of poly-Si film is explained.…”

Section: Introductionmentioning

confidence: 99%

“…In our group, the mechanism of secondary grain growth by ELA has been examined to provide a high-quality large-grained film. [15][16][17][18][19][20][21][22][23][24][25][26] Here, the secondary grain is defined as having a grain size larger than the film thickness. It was found by electron spin resonance (ESR) measurement that most of the crystal defects were located at the grain boundary of poly-Si film and that hydrogen in a-Si film influenced the crystallinity of the poly-Si.…”

Section: Introductionmentioning

confidence: 99%

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Stress Relaxation of Poly-Si Film Formed by Excimer Laser Annealing

Matsuo

2005

Mater. Trans.

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We investigated the low-temperature processed polycrystalline-silicon (poly-Si) film formed by carrying out low-energy-density and multishot excimer laser annealing (ELA) of amorphous Si (a-Si) film on a glass or quartz substrate. The influence of secondary grain growth which grain size becomes larger than the film thickness on the tensile stress relaxation of the poly-Si film was clarified. Relationship between hydrogens which are supplied to the melt-Si from the bottom catalytic-chemical vapor deposition (Cat-CVD) SiN film and the stress relaxation was also examined. The tensile stress in the poly-Si film relaxes upon the appearance of the secondary grains, and the stress decreases with increasing diameter of the secondary grains. However, the hydrogen supply to melt-Si suppresses the secondary grain growth and the stress relaxation becomes marked as the hydrogen concentration decreases. Furthermore, the relationship between the dangling bond density corresponding to the crystal defect density and grain size was investigated, and the defect site was clarified. Lastly, the recrystallization model by ELA at low energy densities was discussed. The model was constructed based on the experimental data that the secondary grain growth occurs suddenly at the critical energy density and the critical shot number, and it was shown that the present model is consistent with the results related to the hydrogen concentration and the secondary grain growth.

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Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Cited by 6 publications

References 0 publications

Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Stress Relaxation of Poly-Si Film Formed by Excimer Laser Annealing

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