Crystal growth of Mg2Si for IR-detector

Tokairin, T.; Ikeda, Junya; Udono, Haruhiko

doi:10.1016/j.jcrysgro.2016.12.004

Cited by 12 publications

(9 citation statements)

References 12 publications

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“…In contrast, 30-mm diameter Mg2Si crystals were synthesized by the VB method using an opentube system and a BN-coated carbon crucible [14]. In the open-tube system, Ar gas, which is used to prevent Mg evaporation, is not enclosed in the ampoule but continuously flows from the outside into the ampoule.…”

Section: Introductionmentioning

confidence: 99%

Growth of 2-inch diameter Mg<sub>2</sub>Si crystal by the VGF method under Ar normal pressure

2023

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A 2-inch diameter Mg2Si crystal was synthesized via the vertical gradient freeze (VGF) method in an open-tube system using pyrolytic boron nitride crucibles coated with boron nitride. Using this open-tube system, Mg evaporation was significantly prevented under Ar gas flow. Many grain boundaries were observed at the crystal cross section. A 5-mm square wafer without grain boundaries was cut out from the crystal and characterized by X-ray rocking curve (XRC) analysis, exhibiting a sharp single peak with a full width at half maximum (FWHM) of 50.4 arcsec. This indicates good crystallinity of the single crystalline area of the synthesized crystal.

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Section: Introductionmentioning

confidence: 99%

Growth of 2-inch diameter Mg<sub>2</sub>Si crystal by the VGF method under Ar normal pressure

2023

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“…So far, Mg 2 Si-based thermoelectric legs have been prepared using various methods. In typical crystal growth methods, it is often challenging to find the optimum growth condition required to control the composition and homogeneity because of the high volatility of magnesium. , Also, unintentional residual impurities appear due to adhesion of the melt to the crucible. , …”

Section: Introductionmentioning

confidence: 99%

“…In typical crystal growth methods, it is often challenging to find the optimum growth condition required to control the composition and homogeneity because of the high volatility of magnesium. 11,12 Also, unintentional residual impurities appear due to adhesion of the melt to the crucible. 11,13 Mechanical alloying is not a self-contained single-step process for fabricating thermoelectric legs but needs to be followed by other hot consolidation techniques such as electric currentactivated or field-assisted sintering.…”

Section: Introductionmentioning

confidence: 99%

“…11,12 Also, unintentional residual impurities appear due to adhesion of the melt to the crucible. 11,13 Mechanical alloying is not a self-contained single-step process for fabricating thermoelectric legs but needs to be followed by other hot consolidation techniques such as electric currentactivated or field-assisted sintering. 14,15 Although temperaturemodulated crystal growth techniques (e.g., oscillated cooling method 16 ) could provide homogeneous fine-structure thermoelectric materials analogous to powder metallurgy microstructures, they are very time-consuming.…”

Section: Introductionmentioning

confidence: 99%

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Activated Reactive Consolidation Method as a New Approach to Enhanced Thermoelectric Properties of n-Type Nanostructured Mg₂Si

Alinejad

Takagiwa

Ikeda

2020

ACS Appl. Energy Mater.

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The activated reactive consolidation method was implemented to enhance the thermoelectric properties of n-type Mg2Si binary components. This method consists of the preparation of a nanocomposite of highly activated starting materials using silicon nanoparticles. These particles were embedded in magnesium forming a so-called “plum-pudding microstructure”. This gives rise to a magnesium–silicon interface, which facilitates diffusion in a short time and at a lower temperature during hot consolidation. Bi–Al co-doped Mg2Si was prepared by this method and a single phase was achieved. The highest zT value of about 1.05 was achieved at 850 K with a high power factor of 3.6 × 10–3 Wm–1 K–2. The enhanced power factor is attributed to suppression of MgO and Bi2Mg3 formation and the significant increase in the electrical conductivity. Approximately 2 h of planetary ball-milling and 10 min of hot pressing at 600 °C are all of the required processes to fabricate the samples in this study. These synthesis conditions lead to the most rapid and simple process for preparing Mg2Si thermoelectric materials.

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“…The first and most traditional one is crystal growth. 9 The second method consists of several stages of melting, pulverization of the ingot and consolidation by SPS or hot-pressing. 10,11 The third one is solid state reaction and self-propagation high temperature synthesis (SHS) 26 method which usually consists of ball milling of starting materials (planetary and SPEX) followed by SPS 12 or hot-pressing.…”

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Low temperature rapid fabrication of magnesium silicide for thermoelectric application

Alinejad

Ikeda

2019

Funct. Mater. Lett.

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A mechanism for rapid, single-step synthesis and fabrication of intermetallic compounds having brittle–ductile ingredients at low temperature is suggested. Employing this mechanism, highly pure, dense Mg2Si pellets were obtained using silicon nanoparticles and micron-sized magnesium particles as starting materials. Silicon nanoparticles chop magnesium particles and produce highly-activated mixture through a planetary ball-milling. Magnesium/silicon interface increases by increasing dispersity of silicon nano-particles in magnesium. Consequently, final product was prepared only by consolidation at 300∘C for 5[Formula: see text]min without any post-treatment. The pure phase of Mg2Si with grain sizes about 200[Formula: see text]nm and with no evidence of presence of MgO was achieved. The Seebeck coefficient, electrical and thermal conductivity were measured to be [Formula: see text]220 [Formula: see text]VK[Formula: see text], 72 [Formula: see text][Formula: see text]cm[Formula: see text] and 3.48[Formula: see text]Wm[Formula: see text][Formula: see text]K[Formula: see text] at 823[Formula: see text]K for nondoped Mg2Si, indicating that this method does not degrade the properties of the product, despite the fact that fabrication is performed rapidly and at low temperature.

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Crystal growth of Mg2Si for IR-detector

Cited by 12 publications

References 12 publications

Growth of 2-inch diameter Mg<sub>2</sub>Si crystal by the VGF method under Ar normal pressure

Growth of 2-inch diameter Mg<sub>2</sub>Si crystal by the VGF method under Ar normal pressure

Activated Reactive Consolidation Method as a New Approach to Enhanced Thermoelectric Properties of n-Type Nanostructured Mg₂Si

Low temperature rapid fabrication of magnesium silicide for thermoelectric application

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Crystal growth of Mg2Si for IR-detector

Cited by 12 publications

References 12 publications

Growth of 2-inch diameter Mg<sub>2</sub>Si crystal by the VGF method under Ar normal pressure

Growth of 2-inch diameter Mg<sub>2</sub>Si crystal by the VGF method under Ar normal pressure

Activated Reactive Consolidation Method as a New Approach to Enhanced Thermoelectric Properties of n-Type Nanostructured Mg2Si

Low temperature rapid fabrication of magnesium silicide for thermoelectric application

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Activated Reactive Consolidation Method as a New Approach to Enhanced Thermoelectric Properties of n-Type Nanostructured Mg₂Si