“…29,[43][44][45][46][47][48][49][50][51] Among those, the tetragonal-like BiFeO 3 driven by epitaxial strain with large c/a ratio (~ 1.23) is of great interest due to its giant spontaneous polarization up to 150 µC/cm 2 . 42 Indeed, both theoretical calculations [52][53][54][55][56] and experimental studies 13,14,42,[57][58][59] Ion implantation, as a controllable defect engineering route, has enabled the ability to continuously tailor the structure phase transition, electric transport, magnetic properties, as well as band gap in epitaxial oxide thin films by driving the out-of-plane lattice expansion while leaving the in-plane lattice epitaxially locked to the substrate. [60][61][62][63][64] Very recently, it has also [65][66][67] However, the use of He implantation to simultaneously control phase transition and domain structure evolution in BiFeO 3 thin films remain elusive.…”