Crystal structure, electron density and diffusion path of the fast-ion conductor copper iodide CuI

Yashima, Masatomo; Xu, Qi; Yoshiasa, Akira; Wada, Satoshi

doi:10.1039/b610127e

Cited by 52 publications

(59 citation statements)

References 34 publications

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“…2 , where Cu cations assume the ¼, ¼, ¼ position of the cubic face centred unit cell whose lattice parameter is a = 0.599 nm zinc-blend type with Cu at the centre of a tetrahedron and I anions at vertices. This tetrahedron is formed by one I atom of cubic vertices and the three closer ones at cubic faces, in agreement with literature 14 .…”

Section: Resultssupporting

confidence: 91%

CuI p-type thin films for highly transparent thermoelectric p-n modules

Faustino

Gomes

Faria

et al. 2018

Sci Rep

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Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm−1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.

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Section: Resultssupporting

confidence: 91%

CuI p-type thin films for highly transparent thermoelectric p-n modules

Faustino

Gomes

Faria

et al. 2018

Sci Rep

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“…The high ionic conductivity of α‐CuI is attributed to the large spatial distribution of copper ions along the

⟨ 111 ⟩

‐directions around their regular position; a diffusion pathway of mobile copper ions along the

⟨ 100 ⟩

‐directions has been suggested . The Cu ion density in superionic α‐CuI has been found in an extended X‐ray absorption fine structure (EXAFS) study to peak at the tetrahedral locations but to be also substantial in the octahedral voids ; here a

⟨ 111 ⟩

‐pathway for diffusion is suggested.…”

Section: Electrical Properties Of Cuimentioning

confidence: 89%

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Grundmann

Schein

Lorenz

et al. 2013

Phys. Status Solidi A

253

313

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Halide semiconductors stand at the very beginning of semiconductor science and technology. CuI was reported as the first transparent conductor, and the first field effect transistor was made from KBr. Although halogens are frequently used in semiconductor preparation, little use is currently made from halide semiconductors in electronics and photonics. We review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as our own work on fully transparent bipolar heterostructure diodes (p‐CuI/n‐ZnO) with high rectification of several 107 and ideality factors down to 1.5. γ‐CuI(111) thin film on glass (1 × 1 cm2) and IV‐characteristics of p‐CuI/n‐ZnO/a‐Al2O3 bipolar heterojunction diode.

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“…Cuprous iodide (CuI) has attracted a great deal of attention [1][2][3] because of its unusual properties such as wide band gap, negative spin-orbit splitting [4], anomalous diamagnetism behavior [5], and large ionicity [6]. CuI has three crystalline phases: a, b and c [7], and normally exists in the low-temperature c-phase with zinc blend structure.…”

Section: Introductionmentioning

confidence: 99%