Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

Ariswan,; Sutrisno, Hari; Prasetyawati, R

doi:10.1088/1757-899x/202/1/012042

Cited by 9 publications

(4 citation statements)

References 5 publications

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“…The value of the lattice constant for the different materials has been taken from previous research. − The lattice mismatch of MoS 2 and In 2 Te 3 is 8.69%, which is lower than that of the HTLs employed in the previous studies. The primary cause of non-radiative recombination is the presence of defect and interface defect density, which results in carrier losses and a drop in output voltage .…”

Section: Resultsmentioning

confidence: 99%

Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

et al. 2023

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Researchers are currently showing interest in molybdenum disulfide (MoS2)-based solar cells due to their remarkable semiconducting characteristics. The incompatibility of the band structures at the BSF/absorber and absorber/buffer interfaces, as well as carrier recombination at the rear and front metal contacts, prevents the expected result from being achieved. The main purpose of this work is to enhance the performance of the newly proposed Al/ITO/TiO2/MoS2/In2Te3/Ni solar cell and investigate the impacts of the In2Te3 BSF and TiO2 buffer layer on the performance parameters of open-circuit voltage (V OC), short-circuit current density (J SC), fill factor (FF), and power conversion efficiency (PCE). This research has been performed by utilizing SCAPS simulation software. The performance parameters such as variation of thickness, carrier concentration, the bulk defect concentration of each layer, interface defect, operating temperature, capacitance–voltage (C–V), surface recombination velocity, and front as well as rear electrodes have been analyzed to achieve a better performance. This device performs exceptionally well at lower carrier concentrations (1 × 1016 cm–3) in a thin (800 nm) MoS2 absorber layer. The PCE, V OC, J SC, and FF values of the Al/ITO/TiO2/MoS2/Ni reference cell have been estimated to be 22.30%, 0.793 V, 30.89 mA/cm2, and 80.62% respectively, while the PCE, V OC, J SC, and FF values have been determined to be 33.32%, 1.084 V, 37.22 mA/cm2, and 82.58% for the Al/ITO/TiO2/MoS2/In2Te3/Ni proposed solar cell by introducing In2Te3 between the absorber (MoS2) and the rear electrode (Ni). The proposed research may give an insight and a feasible way to realize a cost-effective MoS2-based thin-film solar cell.

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Section: Resultsmentioning

confidence: 99%

Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

et al. 2023

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“…The peaks corresponding to Sn 3d 3/2 at 487.6 eV and Sn 3d 5/2 at 496.1 eV are singlets for Sn. , For Se, binding energy peaks at 55.8 and 54.4 eV correspond to Se 3d 3/2 and Se 3d 5/2 states, respectively. These binding energy values for 3d electronic states of Sn and Se correspond to SnSe stoichiometry. − Figure S1a–d (Supporting Information) shows the crystal structures of SnSe at room temperature with the Pnma space group along the a , b , and c axis; here, gray balls indicate Sn atoms; yellow balls indicate Se atoms. The box outlines a single unit cell with eight atoms …”

Section: Results and Discussionmentioning

confidence: 99%

Orthorhombic SnSe Nanocrystals for Visible-Light Photodetectors

Patel

Chauhan

Patel

et al. 2020

ACS Appl. Nano Mater.

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The two-dimensional pristine tin selenide (SnSe), possessing desirable optical, thermal, electrical, and optoelectronic characteristics, is the future nanomaterial of technological applications. In the present study, SnSe nanosingle crystals were grown using the direct vapor transport (DVT) method. The chemical composition, morphological analysis, crystalline phase, crystallinity, optical properties, vibrational modes, and oxidation states of the elements of the grown crystals are verified by energydispersive X-ray analysis (EDAX), X-ray photoelectron spectroscopy (XPS), optical microscopy−scanning electron microscopy (SEM), photoluminescence (PL), Raman, and X-ray diffraction.For the optoelectronic study of grown crystals, the current−voltage characteristic was measured. A photodetector based on singlecrystalline SnSe is fabricated and studied under visible light with an on/off period of 10 s. The device designates excellent photocurrent and responsivity. Moreover, the photoelectrochemical (PEC) visible-light photoresponse of the SnSe single crystals was also studied. The photovoltaic output parameters like the open-circuit voltage (V oc ), short-circuit current (I sc ), fill factor (FF), and efficiency (η%) for the cell were determined. The grown crystal shows the highest photocurrent of 1.31 μA under an illumination of 120 mW/cm 2 . Mott−Schottky plots helped in the redox analysis and energy band location. The Nyquist plot is also plotted to study electrochemical impedance. The work demonstrated the potential application of SnSe nanosingle crystals in the field of optoelectronic visible-light conditions.

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“…Given that no surfactant has been used, the shape and growth mechanism of the SnSe flakes are primarily determined by the anisotropic crystal structure of SnSe. SnSe crystallizes in an orthorhombic unit cell with lattice parameters a = 11.47 Å, b = 4.152 Å, and c = 4.439 Å, in a layered structure having strong covalent intralayer bonding and weak van der Waals interlayer bonding (Figure a). , The layers are perpendicular to the longest axis ( a -axis), hence, only weak van der Waals forces exist along this direction. When thermally decomposed Se and Sn atoms reach the substrate at elevated temperatures, the nucleation centers first form on the substrate’s physically or chemically heterogeneous sites (often on the substrate’s defect sites).…”

Section: Resultsmentioning

confidence: 99%

Harnessing Environmental Sensitivity in SnSe-Based Metal–Semiconductor–Metal Devices: Unveiling Negative Photoconductivity for Enhanced Photodetector Performance and Humidity Sensing

Rani,

Das,

Siddiqui

et al. 2024

ACS Appl. Mater. Interfaces

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The extreme sensitivity of 2D-layered materials to environmental adsorbates, which is typically seen as a challenge, is harnessed in this study to fine-tune the material properties. This work investigates the impact of environmental adsorbates on electrical properties by studying metal–semiconductor–metal (MSM) devices fabricated on CVD-synthesized SnSe flakes. The freshly prepared devices exhibit positive photoconductivity (PPC), whereas they gradually develop negative photoconductivity (NPC) after being exposed to an ambient environment for ∼1 day. While the photodetectors based on positive photoconductivity exhibit a responsivity and detectivity of 6.1 A/W and 5.06 × 108 Jones, the same for the negative photoconductivity-based photodetector reaches up to 36.3 A/W and 1.49 × 109 Jones, respectively. In addition, the noise-equivalent power of the NPC photodetector decreases by 300 times as compared to the PPC device, which implies a prominent detection capability of the NPC device against weak photo signals. To substantiate the hypothesis that negative photoconductivity stems from the photodesorption of water and oxygen molecules on the dangling bonds of SnSe flakes, the flakes are etched along the most active planes (010) with a focused laser beam in an inert environment, which enhances responsivity by 43%, supporting negative photoconductivity linked to photodesorption. Furthermore, the humidity-dependent dark current variation of the NPC photodetectors is used to design a humidity sensor for human respiration monitoring with faster response and recovery times of 0.72 and 0.68 s, respectively. These findings open up the possibility of tuning the photoelectrical response of layered materials in a facile manner to develop future sensors and optoelectronic multifunctional devices.

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Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

Cited by 9 publications

References 5 publications

Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

Orthorhombic SnSe Nanocrystals for Visible-Light Photodetectors

Harnessing Environmental Sensitivity in SnSe-Based Metal–Semiconductor–Metal Devices: Unveiling Negative Photoconductivity for Enhanced Photodetector Performance and Humidity Sensing

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Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

Cited by 9 publications

References 5 publications

Performance Enhancement of an MoS2-Based Heterojunction Solar Cell with an In2Te3 Back Surface Field: A Numerical Simulation Approach

Performance Enhancement of an MoS2-Based Heterojunction Solar Cell with an In2Te3 Back Surface Field: A Numerical Simulation Approach

Orthorhombic SnSe Nanocrystals for Visible-Light Photodetectors

Harnessing Environmental Sensitivity in SnSe-Based Metal–Semiconductor–Metal Devices: Unveiling Negative Photoconductivity for Enhanced Photodetector Performance and Humidity Sensing

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Product

Resources

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Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach

Performance Enhancement of an MoS₂-Based Heterojunction Solar Cell with an In₂Te₃ Back Surface Field: A Numerical Simulation Approach