Crystal structure re-investigation in wide band gap CIGSe compounds

Souilah, M.; Rocquefelte, Xavier; Lafond, A.; Guillot‐Deudon, Catherine; Morniroli, J. P.; Keßler, J.

doi:10.1016/j.tsf.2008.10.077

Cited by 16 publications

(13 citation statements)

References 26 publications

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“…According to previous studies [30,31], the regions labeled A and B are mainly based on Se 4p and Cu 3d interactions and on the In-Se band, respectively, whatever the chalcopyrite or stannite structure. Recently these attributions have been confirmed by ab-initio calculations [32]. Substitution of Cu + ions by M 3 + ions affects the electronic structure with a strong reduction of the Se p character at the top of the valence band, due to the Cu vacancies.…”

Section: Discussionmentioning

confidence: 72%

Structural investigation of the Cu2Se–In2Se3–Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Souilah

Lafond²,

Guillot‐Deudon³

et al. 2010

Journal of Solid State Chemistry

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Structures of compounds in the Cu 2 Se-In 2 Se 3-Ga 2 Se 3 system have been investigated through X-ray diffraction. Single crystal structure studies for the so-called stoichiometric compounds Cu(In,Ga)Se 2 (CIGSe) confirm that the chalcopyrite structure (space group I4¯ 2d) is very flexible and can adapt itself to the substitution of Ga for In. On the other hand a structure modification is evidenced in the Cu 1Àz (In 0.5 Ga 0.5) 1+z/3 Se 2 series when the copper vacancy ratio (z) increases; the chalcopyrite structure turns to a modified-stannite structure (I4¯ 2m) when zZ0.26. There is a continuous evolution of the structure from Cu 0.74 (In 0.5 Ga 0.5) 1.09 Se 2 to Cu 0.25 (In 0.5 Ga 0.5) 1.25 Se 2 ((i.e. Cu(In 0.5 Ga 0.5) 5 Se 8), including Cu 0.4 (In 0.5 Ga 0.5) 1.2 Se 2 (i.e. Cu(In 0.5 Ga 0.5) 3 Se 5). From this single crystal structural investigation, it is definitively clear that no ordered vacancy compound exists in that series. X-ray photoemission spectroscopy study shows for the first time that the surface of powdered Cu 1Àz (In 0.5 Ga 0.5) 1+z/3 Se 2 compounds (za0) is more copper-poor than the bulk. The same result has often been observed on CIGSe thin films material for photovoltaic applications. In addition, optical band gaps of these nonstoichiometric compounds increase from 1.2 to 1.4 eV when z varies from 0 to 0.75.

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Section: Discussionmentioning

confidence: 72%

Structural investigation of the Cu2Se–In2Se3–Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Souilah

Lafond²,

Guillot‐Deudon³

et al. 2010

Journal of Solid State Chemistry

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“…Cu(In 1-x Ga x )Se 2 and the related I-III-VI 2 chalcopyrite compounds are of great interest due to their potential in photovoltaic and nonlinear optical applications [1]- [3]. Another attractive property is their tolerance to a large range of anion-to-cation off stoechiometry, manifested by the existence of an ordered defect compounds (ODC) with large variations in their Cu/In, Ga/Se ratio [4].…”

Section: Introductionmentioning

confidence: 99%

Crystal Growth, Structural and Optical Studies of CuGa<sub>3</sub>Se<sub>5</sub> Bulk Compounds

Habib¹,

Moussa²

2016

WJCMP

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Bulk materials were synthesized by the Bridgman technique using the elements Cu, Ga, Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity. Optical response (Photoconductivity) and Photoluminescence (PL) and PL-excitation (PLE) at temperatures from 4.2 to 77 K were also used to estimate the band-gap energy of Cu-Ga 3 Se 5. They show a nearly perfect stoechiometry and present p-type conductivity. CuGa 3 Se 5 either have an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained by Photoconductivity and Photoluminescence (PL) for the different samples is 1.85 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type. The defects that appear are probably Ga Cu .

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“…We observe a remarkable difference in shape and size in samples without and with Ga. Dependence of gallium content on grain size interprets that the atomic radii of gallium are smaller than indium hence greater amount of gallium results in smaller grain size (Alberts 2004(Alberts , 2009Souilah et al 2009;Zhang et al 2009). an important role in the growth of nanoparticles in particular direction.…”

Section: Resultsmentioning

confidence: 71%

CIGS nanostructure: preparation and study using liquid phase method

2015

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Present study is motivated by interesting attainment obtained for copper indium gallium diselenide compound as a light absorbing material for thin-film solar cell. Formation of copper indium gallium diselenide nanostructures via solvothermal method using starting precursors of copper, indium, gallium salts, and selenium powder is represented. Preparation is done by varying x (0.1 and 0.3) in CuIn 1-x Ga x Se 2 compound at a constant temperature and using ethanolamine as a solvent. Characterization of nanostructures is done using powder X-ray diffraction, scanning electron microscopy, dynamic light scattering, Fourier transform infrared spectroscopy, and UV-Vis spectroscopy. It is found that grown chalcopyrite structure at different x, possess agglomeration in nanostructures. Results indicate that presence of 10 % gallium in copper indium gallium diselenide compound leads to the single-phase growth, prepare at the temperature of 190°C for 19 h.

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Crystal structure re-investigation in wide band gap CIGSe compounds

Cited by 16 publications

References 26 publications

Structural investigation of the Cu2Se–In2Se3–Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Structural investigation of the Cu2Se–In2Se3–Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Crystal Growth, Structural and Optical Studies of CuGa<sub>3</sub>Se<sub>5</sub> Bulk Compounds

CIGS nanostructure: preparation and study using liquid phase method

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Crystal structure re-investigation in wide band gap CIGSe compounds

Cited by 16 publications

References 26 publications

Structural investigation of the Cu2Se–In2Se3–Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Structural investigation of the Cu2Se–In2Se3–Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds

Crystal Growth, Structural and Optical Studies of CuGa&lt;sub&gt;3&lt;/sub&gt;Se&lt;sub&gt;5&lt;/sub&gt; Bulk Compounds

CIGS nanostructure: preparation and study using liquid phase method

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Crystal Growth, Structural and Optical Studies of CuGa<sub>3</sub>Se<sub>5</sub> Bulk Compounds