Crystal Structures of α-and β-Indium Selenide, In₂Se₃

Ab initioelectronic structure of thallium-based topological insulators

“…Experimentally, these compounds are not known and it seems that, in contrast to the (formally) monovalent Tl, the In rather acts as trivalent element: compounds such as In 2 Te 3 are known to crystallize in rhombohedral forms, with one modification very similar to Bi 2 Te 3 . 42 In the InATe 2 (A = Bi, Sb) form, the optimized lattice parameters are a = 4.565Å and c = 22.388Å for the Bi compound, while for InSbTe 2 we get a = 4.438Å and c = 23.371Å. The internal parameter u is 0.250 and 0.244 for the Bi and Sb compounds, respectively.…”

Investigation of the R2Se3–Cu2Se–In2Se3 (R=La, Pr, Y and Er) systems at 870K and crystal structure of the R2CuInSe5 (R=La, Ce and Pr) compounds

“…[11]: ␣-In 2 Se 3 (space group R3m, a = 0.4025 nm, c = 2.8762 nm; space group P6 3 /mmc, a = 0.4025 nm, c = 1.9235 nm), ␤-In 2 Se 3 (space group R3m, a = 0.4000 nm, c = 2.833 nm), ␥-In 2 Se 3 (space group P6 1 22 or P6 5 22, a = 0.713 nm, c = 1.958 nm) and ␦-In 2 Se 3 (hexagonal unit cell, a = 0.4014 nm, c = 0.964 nm). Complete crystal structure determinations have been reported for some of them: In 2 Se 3 (own structure type, space group P6 5 , a = 0.711 nm, c = 1.930 nm) [12], In 2 Se 3 (Al 2 S 3 structure type, space group P6 1 , a = 0.711 nm, c = 1.934 nm) [13], In 2 Se 3 (Bi 2 Te 3 structure type, space group R3m, a = 0.405 nm, c = 2.941 nm) [14], In 2 Se 3 (own structure type, space group R3m, a = 0.405 nm, c = 2.877 nm) [14].…”

Structural control of In 2 Se 3 polycrystalline thin films by molecular beam epitaxy

“…On the other hand, In 2 Se 3 has two crystal structures, i.e., a layered structure (α-phase) and a defect wurtzite structure (γ-phase) [4][5][6]. The layered structure of the α-In 2 Se 3 consists of rather loose stack of covalently bonded layers, including five atomic layers of Se-In-Se-In-Se [7]. The bandgap of α-In 2 Se 3 is approximately 1.4 eV [8].…”