Despite
the well-known implications in the field of III–V
semiconductors, lattice strain in halide perovskite materials has
been largely overlooked until recently. Here, we review the effect
of lattice strain on the structural, chemical, and optoelectronic
properties of metal halide perovskites to understand how strain engineering
can be applied to improve device performance. We start by arguing
that perovskites, like any other semiconducting material, are not
immune to the negative effects of mismanaged strain. We analyze the
originand detrimental consequencesof lattice strain
in perovskite crystals and heterostructures. We then discuss how strain
management addresses the polymorphism issue of some of the most desirable
perovskite compositions, and how it prevents the harmful migration
of ions in perovskites. We conclude by offering our perspective on
the unexplored potential of strain engineering and argue that its
controlled management can lead to untapped territories, including
perovskite large-area single-crystalline thin films and electrically
pumped lasers.