Crystalline<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>thin films on Si(111) and the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mo>×</

Wang, Xuesen; Zhai, Guangjie; Yang, Jie; Cue, N.

doi:10.1103/physrevb.60.r2146

Cited by 53 publications

(23 citation statements)

References 16 publications

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“…The nitridation of Si surfaces and in situ LEED, AES, STM, and ex situ cross-sectional transmission electron microscopy (XTEM) analyses of the SiN x films have been described in detail in previous reports [3,[11][12][13]. Briefly, clean Si(111) and Si(001) samples were transferred to the sample preparation chamber and then exposed to NO at a substrate temperature of 950…”

Section: Methodsmentioning

confidence: 99%

“…The atomic resolution image in figure 2(b) indicates the existence of a reconstruction with a periodicity of 0.384 nm × 8 = 3.07 nm on the surface of the SiN x film. The unit cell outlined with a dashed diamond is suggested to be a (4 × 4) reconstruction on β-Si 3 N 4 (0001) [11][12][13]. The orientation of the unit cell with respect to the Si(111) substrate is unique: the long diagonal of the cell is along the direction [112] of the underlying Si(111), as shown by the arrow in figure 2(b).…”

Section: Ge Growth On Sin X /Si(111)mentioning

confidence: 99%

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Ge islanding growth on nitridized Si and the effect of Sb surfactant

Wang

Cue

et al. 2002

J. Phys.: Condens. Matter

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The growth modes of Ge islands on SiN x -covered Si with and without a surfactant Sb layer are studied by scanning tunnelling microscopy. It is observed that on SiN x /Si(111), Sb cannot enhance the coverage of (111) facets of Ge islands, which are the dominant features in the late stage of Ge overlayer growth when Sb is not used. However, on SiN x /Si(001), Sb favours the growth of Ge (001) facets, which will shrink during the islanding growth if Sb is not used. The different behaviours with the (111) and (001) substrates suggest that the surfactant effect of Sb on the islanding growth of Ge on SiN x /Si is strongly orientation dependent.

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Section: Methodsmentioning

confidence: 99%

Section: Ge Growth On Sin X /Si(111)mentioning

confidence: 99%

Ge islanding growth on nitridized Si and the effect of Sb surfactant

Wang

Cue

et al. 2002

J. Phys.: Condens. Matter

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“…14,15 Among various phases of Si 3 N 4 , β-Si 3 N 4 is the most energetically favored. 16,17 Furthermore, the surface lattice constant of β-Si 3 N 4 (0001) matches well with that of 3×3 graphene primitive cell.…”

confidence: 99%

Graphene on β-Si3N4: An ideal system for graphene-based electronics

et al. 2011

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One of the most severe limits in future design of graphene-based electronic devices is that when supported on a substrate, the electron mobility of graphene is often reduced by an order of magnitude or more. In this paper, via theoretical calculations, we show that the non-polar β-Si3N4 (0001) surface may be an excellent support for both single-layer or bi-layer graphene to overcome this limit. Since the high-κ dielectric material is an indispensable component in integrated circuits, the silicon nitride supported graphene as discussed in this paper may provide an ideal platform for future graphene-based electronics.

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“…However, an epitaxial ␤-Si 3 N 4 ͑0001͒ can be successfully formed on a Si͑111͒ substrate. [27][28][29][30][31][32] There are four Si 3 N 4 molecules per unit cell in alpha Si 3 N 4 . Silicon has diamond's tetrahedral structure.…”

Section: A Materialsmentioning

confidence: 99%

Molecular dynamics simulations of the mechanical strength ofSi∕Si3N4interfaces

et al. 2005

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Molecular dynamics simulations are performed on parallel computers to investigate the crystalline Si͑111͒ /Si 3 N 4 ͑0001͒ interface that is modeled as an eight-component system. The average total energy per particle and the average kinetic energy per particle of the subsystems are monitored during the preparation of the system. The Young's modulus of the interface is compared with that of the silicon part alone and that of the silicon-nitride film, respectively. The results for one extended simulation feature a crack in the silicon-nitride film and dislocated atoms in silicon below the crack. Simulations at rates of strain ranging from 0.00125 to 0.05 ps −1 show that for lower strain rates, the systems stretched faster reach their ultimate strength at a higher strain value than those that were stretched more slowly. At the highest strain rates, however, the failure mechanisms change qualitatively indicative of a more ductile behavior.

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CrystallineSi3N4thin films on Si(111) and the4×

Cited by 53 publications

References 16 publications

Ge islanding growth on nitridized Si and the effect of Sb surfactant

Ge islanding growth on nitridized Si and the effect of Sb surfactant

Graphene on β-Si3N4: An ideal system for graphene-based electronics

Molecular dynamics simulations of the mechanical strength ofSi∕Si3N4interfaces

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