Molecular dynamics simulations of the mechanical strength of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi mathvariant="normal">Si</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>interfaces

Bachlechner, Martina E.; Zhang, Jennifer; Wang, Ye; Schiffbauer, Jarrod; Knudsen, Steven; Korakakis, D.

doi:10.1103/physrevb.72.094115

Cited by 9 publications

(3 citation statements)

References 51 publications

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“…The details of the corresponding Si(111)/Si 3 N 4 (0 0 0 1) interface structure have been already studied by simulations, as described in Ref. [26]. Despite this epitaxial relation, it remains however unclear if the basal plane of a nitride crystallite rod induces the formation of solid silicon in the slightly supercooled silicon melts in our experiments.…”

Section: Article In Pressmentioning

confidence: 83%

Crystallization of supercooled silicon droplets initiated through small silicon nitride particles

Alphei

Braun

Becker

et al. 2009

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 83%

Crystallization of supercooled silicon droplets initiated through small silicon nitride particles

Alphei

Braun

Becker

et al. 2009

Journal of Crystal Growth

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“…Bachlechner et al investigated the mechanical strength of Si/Si 3 N 4 interface by applying tensile strain parallel to the interface. The results showed that the binary system failed as the crack initiates and propagates in the Si 3 N 4 layer, whereas in the Si layer, only dislocations were emitted.…”

Section: Introductionmentioning

confidence: 99%

Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems

Lin

Babicheva

Xue

et al. 2015

Physica Status Solidi (b)

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This work studies the effects of temperature, voids at or near the interface on the interfacial fracture behavior, and mechanisms of the Si/a-Si 3 N 4 bilayer systems via molecular dynamics simulations. Under mode I loading, at 300 K, the interfacial strength of the bilayer system without voids is $22.5 GPa and it undergoes brittle fracture at the interface. However, at 600 K, failure occurs in the a-Si 3 N 4 layer in a ductile mode. With the existence of void in the Si layer, crack initiates at the void and propagates toward the interface when the temperature is 300 K. However, as temperature increases to 600 K, the defected bilayer system undergoes brittle fracture at the interface at a significantly lowered interfacial strength. With the presence of void at the interface, the bilayer system fractures at the interface with a deteriorated strength regardless of temperature. Under mode II loading, the Si/a-Si 3 N 4 system undergoes three deformation processes: elastic deformation, followed by plastic deformation in the a-Si 3 N 4 layer, and subsequently, interfacial sliding. The presence of voids at different locations and the increase in temperature lower the stresses required for interfacial sliding but do not have significant effect on the shear deformation processes. This study provides an insight to fracture behavior of Si/a-Si 3 N 4 system at certain operating conditions.

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“…With recent technological advancement, this tool is widely employed to investigate the failure mechanisms such as fracture and dislocations for a vast variety of materials (Abraham and Gao, 2000;Gerde and Marder, 2001). Bachlechner et al (2005) investigated the mechanical strength of the Si/Si 3 N 4 interface by applying tensile strain parallel to the interface. The results showed that the binary system failed as the crack initiates and propagates in the Si 3 N 4 layer, whereas in the Si layer, only dislocations were emitted.…”

Section: Interfacial Delaminationmentioning

confidence: 99%

Failure analysis and characterization for microelectronic packaging

Lin¹

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In the recent years, the mechanical robustness and reliability of three-dimensional (3D) integrated circuit (IC) packaging have become tremendously challenging due to its continuous reduction in size and increase in vertical integration. Thermal problems such as the silicon (Si) substrate cracking and interfacial delamination are increasingly dominant due to the presence of high heat density in the small multilayer IC packaging. Furthermore, as the manufacturing and processing steps of the 3D ICs are significantly different from that of the conventional ICs, new defect and failure mechanisms that are unique to 3D ICs are not wellinvestigated. The reduction in size has also increased the sensitivity of the 3D ICs to microdefects that had not previously threatened their reliability and integrity. The increased complexity and miniaturization of 3D IC packaging and its consequential problems demand for new failure analysis methods. Therefore, this PhD research is proposed to study the physical failure modes and mechanisms associated with 3D ICs via molecular dynamics (MD) simulation and finite element method (FEM), and to develop new failure analysis methods for packaging characterization, thereby improving the packaging techniques and processes.Si is commonly used as a substrate material in the IC packaging but yet its fracture behavior theoretical framework is still not well-developed. Thus, studies are first carried out on Si to understand its fracture mechanism through MD simulation and experiment. As the mechanical properties of Si are strongly influenced by the crystallographic orientation, defects, grain boundary (GB) and temperature, their effects on the tensile properties and failure mechanisms of Si are investigated. The results show that when Si is subjected to tensile loading, it undergoes brittle fracture and its (111) plane is the most favorable cleavage plane due to its high atomic packing density, thus resulting in the highest stiffness and lowest

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Molecular dynamics simulations of the mechanical strength ofSi∕Si3N4interfaces

Cited by 9 publications

References 51 publications

Crystallization of supercooled silicon droplets initiated through small silicon nitride particles

Crystallization of supercooled silicon droplets initiated through small silicon nitride particles

Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems

Failure analysis and characterization for microelectronic packaging

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Molecular dynamics simulations of the mechanical strength ofSi∕Si3N4interfaces

Cited by 9 publications

References 51 publications

Crystallization of supercooled silicon droplets initiated through small silicon nitride particles

Crystallization of supercooled silicon droplets initiated through small silicon nitride particles

Effects of temperature and voids on the interfacial fracture of Si/a‐Si3N4 bilayer systems

Failure analysis and characterization for microelectronic packaging

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Product

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Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems