Crystalline Silicon Thin Film Solar Cells on Foreign Substrates by High Temperature Deposition and Recrystallization

Reber, S.; Kieliba, T.; Bau, S.

doi:10.1002/0470091282.ch2

Cited by 3 publications

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“…Poly-Si film quality and solar cell production cost are directly related to substrate choice [22]. Wide variety of substrates like glass [23,24], ceramics [25,26], glass-ceramics [27,28 ], stainless steel [ 29 ,30], graphite [31 , 32 ] have been used for poly-Si thin film production.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

et al. 2019

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Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of ~200nm and used as a seed layer, on silicon nitride coated glass substrate. Thanks to aluminium metal in AIC process, the natural doping of AIC thin films is p + type (~2×10 18 cm -3 ). On the other hand, recombination of carriers can be controlled by partial doping through the defects that may have advantages to improve the thin film quality by the overdoping induced passivation. In this study, boron (B) and phosphorus (P) doped AIC seed layers were thicken to ~2μm by solid phase epitaxy (SPE) technique at 800°C for 3 hours under nitrogen flow in a tube furnace. During the crystallization annealing, exodiffusion of dopants was formed through the SPE film from the AIC seed layer. Optical microscope and electron back scattering diffraction technique (EBSD) were used to analyse the structural quality of the Si films. The poly-Si layer with an average grain size value of ~32µm was formed by AIC+SPE technique for P doped samples while EBSD analysis gave no results for B doped samples due to the quite deterioration on the surface of the films. AIC+SPE films were analysed in terms of structural properties by using micro-Raman Spectroscopy and X-ray diffraction systems. The results showed that the crystallinity of compressive stress formed AIC+SPE films reached up to 98.55%. Additionally, the Raman analysis pointed out that no temperature-induced stress were generated in the AIC+SPE films while compressive stress was induced by increasing the annealing duration for doped AIC film. For all samples, the preferred orientation was <100>, and the crystallite size up to 44.4nm was formed by phosphorus doping of AIC films. The doping efficiency was determined by time-of-flight secondary ion mass spectroscopy for doped samples. A graded n + n doping profile was obtained by exo-diffusion of phosphorus from the overdoped seed layer during the epitaxial thickening while boron doping of SPE film has failed with exo-diffusion of boron from AIC seed layer into SPE film. Finally, high-quality n + n type poly-Si films were fabricated on glass substrate by using AIC+SPE technique.

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Section: Accepted Manuscriptmentioning

confidence: 99%

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

et al. 2019

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“…Having in mind the objective of using low‐cost reactants and processes, we have chosen APCVD as the deposition method. APCVD provides high deposition rates, acceptable uniformity, controllable doping profiles, and good film quality, with a relatively simple set‐up . As substrates, we use commercial float glass or crystalline silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane**

Benvenuto

Buitrago‐Sierra

Schmidt

2015

Chemical Vapor Deposition

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Atmospheric pressure (AP) thermal CVD is used to deposit thin poly-Si films on glass substrates. Also produced are heterojunction solar cells carrying out the deposition on c-Si wafers. A batch-type hot-wall reactor, employing SiHCl 3 as a precursor, H 2 as a carrier and reaction gas, BBr 3 as a p-type doping agent, and PCl 3 as a n-type doping agent, is used. The films obtained are homogeneous and well-adhered to the substrate. Samples are structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), reflectance spectroscopy in the UV-vis region, X-ray diffraction (XRD), and Raman spectroscopy (RS). The electrical characterization includes conductivity measurements as a function of temperature, and Hall effect measurements. For the p-doped samples, XRD reveals a strong (220) preferential orientation of the films, while the n-doped samples lack columnar structure or preferential orientation. RS and UV-reflectance confirm a high crystalline fraction. Dark conductivity measurements as a function of temperature show that the films can be grown intrinsic, p-type or n-type. Activation energies between 0.61 and $0 eV are obtained, with reasonable values for the carrier mobilities. For the solar cells, relatively high values of V OC ($507 mV) and J SC ($29.6 mA cm À2 ) are measured. In conclusion, these results demonstrate the feasibility of directly depositing doped poly-Si thin films on glass and c-Si substrates at intermediate temperatures, with interesting characteristics for photovoltaic applications.

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“…1(a), has an atomic density as high as g/cm 3 similar to the reference sample deposited at 250 C or a thermally grown SiO 2 , 10) whereas the top layer, the one with voids, has a density significantly lower, i.e. $2 g/cm 3 , or 10% less.…”

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confidence: 98%

“…Porous SiO 2 layers are used as efficient and inexpensive antireflection coatings on photovoltaic modules since they have a low (<1:5) refractive index in the visible and infrared spectral range, or as biological substrates since the roughness of the layer may be helpful for cell growth and proliferation. 3,4) Conversely, low-temperature-deposited dense SiO 2 layers are required for applications such as gate insulators and diffusion barriers of thin-film transistors realised on polymeric substrates. 5) Actually, the main challenge is to control as accurately as possible the porosity of the SiO 2 layer, depending on key parameters such as temperature and thickness, for the specific application.…”

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confidence: 99%

Electrical Properties of Ultrathin SiO$_{2}$ Layer Deposited at 50 $^{\circ}$C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition

Mannino¹,

Ruggeri

Alberti³

et al. 2012

Appl. Phys. Express

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We found a strong correlation between the layer porosity and electrical properties of a SiO 2 layer deposited by inductively coupled plasma chemical vapor deposition. At 50 C the SiO 2 layers have a double structure: a dense layer in contact with the substrate and a porous layer on top of it. The critical thickness at which voids appear depends on the deposition rate. Breakdown voltage and charge trapping performances of SiO 2 layers are very good if the thickness is below the critical value and deteriorate significantly in thicker, porous, layers. Layer porosity is absent when the sample is deposited at 250 C.

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Crystalline Silicon Thin Film Solar Cells on Foreign Substrates by High Temperature Deposition and Recrystallization

Cited by 3 publications

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Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane**

Electrical Properties of Ultrathin SiO$_{2}$ Layer Deposited at 50 $^{\circ}$C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition

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