Electrical Properties of Ultrathin SiO$_{2}$ Layer Deposited at 50 $^{\circ}$C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition

Mannino, Giovanni; Ruggeri, R.; Alberti, Alessandra; Fortunato, G.; Maiolo, Luca

doi:10.1143/apex.5.021103

Cited by 11 publications

(8 citation statements)

References 9 publications

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“…The different deposited architectures of SiO 2 occur based on the different temperatures of deposition, at higher temperature leads to greater absorbance due to much smother substrates [ 41 , 42 ]. We expect that at a lower temperature of 50° Celsius, the PECVD deposition structure to be similar to those deposited using ICP PECVD SiO 2 matrixes at these temperatures [ 43 ].…”

Section: Resultsmentioning

confidence: 99%

Plotter Cut Stencil Masks for the Deposition of Organic and Inorganic Materials and a New Rapid, Cost Effective Technique for Antimicrobial Evaluations

Childs

Pereira²,

Didier³

et al. 2022

Micromachines

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Plotter cutters in stencil mask prototyping are underutilized but have several advantages over traditional MEMS techniques. In this paper we investigate the use of a conventional plotter cutter as a highly effective benchtop tool for the rapid prototyping of stencil masks in the sub-250 μm range and characterize patterned layers of organic/inorganic materials. Furthermore, we show a new diagnostic monitoring application for use in healthcare, and a potential replacement of the Standard Kirby-Bauer Diffusion Antibiotic Resistance tests was developed and tested on both Escherichia coli and Xanthomonas alfalfae as pathogens with Oxytetracycline, Streptomycin and Kanamycin. We show that the reduction in area required for the minimum inhibitory concentration tests; allow for three times the number of tests to be performed within the same nutrient agar Petri dish, demonstrated both theoretically and experimentally resulting in correlations of R ≈ 0.96 and 0.985, respectively for both pathogens.

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Section: Resultsmentioning

confidence: 99%

Plotter Cut Stencil Masks for the Deposition of Organic and Inorganic Materials and a New Rapid, Cost Effective Technique for Antimicrobial Evaluations

Childs

Pereira²,

Didier³

et al. 2022

Micromachines

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“…After high vacuum was established (5x10 -7 Torr) in the process chamber, the a-Si was deposited at 50°C, 10 mTorr and 500 W using 20 sccm of pure SiH 4 gas and 1sccm of Ar to ignite the plasma. An extensive structural characterization of low-temperature plasma grown layers had previously been performed elsewhere [40,41]. The H content measured by Elastic Recoil Detection Analysis (ERDA) is as high as 25% (Fig.…”

Section: Substrate Preparationmentioning

confidence: 99%

Heterogeneous growth of continuous ZIF-8 films on low-temperature amorphous silicon

Monforte

Mannino

Alberti

et al. 2019

Applied Surface Science

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Thin amorphous silicon films, deposited at low temperature by Inductively Coupled Plasma Chemical Vapor Deposition, have, for the first time, been employed as substrate for ZIF-8 growth. In order to investigate the role of the surface chemistry on the nucleation process, films have also been grown on other silicon-based substrates such as H-terminated Si(100), SiO 2 and quartz. Film preparation was carried out at room temperature using a mixed Zn nitrate and imidazole solution in methanol or ethanol. Using methanol, continuous ZIF-8 films were obtained on amorphous Si and Hterminated Si(100), while less homogeneous films were formed on the other surfaces. In ethanol, slower growth rates occurred and thinner films, compared to the ones in methanol, were obtained.These slower rates highlight the different effects of the four surfaces on the growth process. These differences have been related to the silanol density of the surfaces and to the Lewis basic strength which affect imidazole moiety deprotonation. H-terminated Si(100) and amorphous Si turned out to be the most reactive surfaces, whereas on quartz and, especially, on SiO 2 reactivity was much lower.Experimental results have been validated by the DFT modelling of the proton exchange, which takes place between the imidazole group and the surface. Finally, the VOCs adsorption capability of ZIF-8 films grown on amorphous silicon has been evaluated through temperature desorption experiments.

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“…Low-temperature deposition of silicon oxide (SiO x ) films is required for the fabrication of not only thin-film transistors on non-heat-resistant substrates 1) but also interlayer dielectrics in size-minimizing ICs to suppress the disconnection of the interconnect metal, the redistribution of the dopant, and defect generation in the fabricated underlayer. 2) For low-temperature deposition, plasma-enhanced CVD (PECVD) has been widely used in practice, 1,[3][4][5][6] which requires an expensive system consisting of vacuum equipment and high power supply. In addition, tetraethylorthosilicate [TEOS; Si(OC 2 H 5 ) 4 ] vapor is commonly used as a deposition gas source.…”

Section: Introductionmentioning

confidence: 99%

Study on residual OH content in low-temperature Si oxide films after in situ post-deposition heating (PDH)

Horita,

2023

Jpn. J. Appl. Phys.

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We investigated the post-deposition-heating (PDH) effect on OH-content in the SiOx films deposited by atmospheric-pressure CVD using a deposition source of silicone oil (SO) with O3 and TCE vapor at the temperature Td of 180 to 250 oC. The PDH is performed in-situ for 5 min in the deposition chamber just after film deposition without supply of SO, where the heating temperature is the same as Td. OH contents in the films deposited normally are decreased with increasing Td. On the contrary, those with PDH are decreased with deceasing Td from 220 oC, and, at Td = 190 oC, a minimum OH content can be obtained. This means that lower OH content remains at a lower deposition temperature. This PDH effect on OH reduction can be explained by easily-reconstructible structure of SiOx films deposited at low temperature. Further, we discussed mechanism of the PDH effect from the other points.

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Electrical Properties of Ultrathin SiO$_{2}$ Layer Deposited at 50 $^{\circ}$C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition

Cited by 11 publications

References 9 publications

Plotter Cut Stencil Masks for the Deposition of Organic and Inorganic Materials and a New Rapid, Cost Effective Technique for Antimicrobial Evaluations

Plotter Cut Stencil Masks for the Deposition of Organic and Inorganic Materials and a New Rapid, Cost Effective Technique for Antimicrobial Evaluations

Heterogeneous growth of continuous ZIF-8 films on low-temperature amorphous silicon

Study on residual OH content in low-temperature Si oxide films after in situ post-deposition heating (PDH)

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