1982
DOI: 10.1149/1.2124199
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Crystalline Structure Changes of Molybdenum Silicide Films Deposited by Sputtering and by Coevaporation after Isochronal Annealing

Abstract: Crystalline structure changes of molybdenum silicide films after isochronal annealing are studied by x-ray and transmission electron microscopy. Two types of films deposited by sputtering from a hot pressed MoSi2 source and coevaporation of molybdenum and silicon, with controlled stoichiometry of MoSi2, are prepared. For both types of depositions, the films that are as-deposited and annealed at temperatures below 350~ are amorphous, but those annealed between 400 ~ and 600~ show hexagonal MoSi2. Transformation… Show more

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Cited by 13 publications
(1 citation statement)
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“…AES was used to determine the in-depth composition of niobium nitride formed by laser annealing of niobium metal immersed in liquid nitrogen (652). The properties of molybdenum silicide films for very large integrated circuit use were measured (427,674,827,882,979). The XPS spectrum and band structure of RuC13 were reported (601).…”
Section: Semiconductorsmentioning
confidence: 99%
“…AES was used to determine the in-depth composition of niobium nitride formed by laser annealing of niobium metal immersed in liquid nitrogen (652). The properties of molybdenum silicide films for very large integrated circuit use were measured (427,674,827,882,979). The XPS spectrum and band structure of RuC13 were reported (601).…”
Section: Semiconductorsmentioning
confidence: 99%